RFD12N06RLESM9A BYCHIP | Alldatasheet
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Features
VDS= 60V, ID= 30A RDS(ON) < 27 mΩ @ VGS = 10V RDS(ON) < 33 mΩ @ VGS = 4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features www.bychip.cn Pin Assignment TO-252-2L Top View Schematic Diagram v1.0 RFD12N06RLESM9A
Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.0 3.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 27 mΩ Forward Transconductance gFS VDS=5V,ID=20A - 30 - S Dynamic Characteristics (Note4) Input Capacitance Clss - 1900 - PF Output Capacitance Coss - 130 - PF Reverse Transfer Capacitance Crss VDS=30V,VGS=0V, F=1.0MHz - 95 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 5 - nS Turn-on Rise Time tr - 2.6 - nS Turn-Off Delay Time td(off) - 16.1 - nS Turn-Off Fall Time tf VDS=30V, RL=1.5Ω VGS=10V,RG=3Ω - 2.3 - nS Total Gate Charge Qg - 30 nC Gate-Source Charge Qgs - 4.5 nC Gate-Drain Charge Qgd VDS=30V,ID=20A, VGS=10V - 7.5 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=30A - 1.2 V Diode Forward Current (Note 2) IS - - 30 A Reverse Recovery Time trr - 35 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =20A di/dt = 100A/μs(Note3) - 53 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25 ,VDD=℃ 30V,VG=10V,L=0.5mH,Rg=25Ω www.bychip.cn v2.0 RFD12N06RLESM9A