Q6016LH4 HAOPIN | Alldatasheet
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Technical content
Features
Main terminal 1 (T1) gate (G) Main terminal 2 (T2) isolated UnitSYMBOL PARAMETER Value VDRM 600 V ITR M S 16 A ITSM 167 A Repetitive peak off-state voltages RMS on-state current full sine wave Non-repetitive peak on-state current (full cycle,Tj initial=25 ) Simplified outlineSymbol T2 T1 G 1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Three quadrant triacs Q6016LH4 123 TO-220 TM HPM
Description
Passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber. SYMBOL PARAMETER MAX UNIT Rthj-mb Rth j-a Thermal resistance Junction to mounting base Junction to ambient CONDITIONS TYPMIN K/W -full cycle half cycle -in free air -60Thermal resistance - - K/W K/W1.2 1.7
2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Three quadrant triacs TM HPM Q6016LH4 Limiting values in accordance with the Maximum system(IEC 134) SYMBOL PARAMETER CONDITIONS MIN Value UNIT VDRM IT(RMS) ITSM It dI/dt Repetitive peak off-state voltages RMS on-state current Non repetitive surge peak on-state current I t for fusing Repetitive rate of rise of on-state current after triggering V full sine wave; T j=2 5 p r i o rt o surge I =20A;I =0.2A , dl /dt=0.2A/ TM G T G s 60Hz 50Hz 600 A A A AS 200 167 166 - 100 A/ s IGTM Tstg Tj PG(AV) Peak gate current Average gate power Storage temperature Operating junction temperature A W Wover any 20 ms period - 2 - 0.5 -40 - 125 150 T =25 C unless otherwise statedJ O IDRM IH VTM dV/dt(c) Dynamic Characteristics dl /dtcom V =67%V ;T =110 ; exponential waveform; gate open circuit DM DRM(max) j V =400V;T =125 ; I =16A; dV /dt=10V/ s;gate open circuit DM j T(RMS) com - 1.6 mA V 0.05 0.5 - V/ s A/ms Note 1 : Although not recommended,off-state voltages up to 800V may be applied without damage ,but the triac may swith to the on-state .the rate of current should not exceed 15A/us. Note 2 : Device does not trigger in the T2-,G+ quadrant. t=10ms PGM Peak gate power SYMBOL PARAMETER CONDITIONS MIN Latching current IGT V =12V; I =0.1ADT UNITMAXTYP mA mA mA VGT V Gate trigger current QI QII QIII Gate trigger voltage Tc=25 - - 2 mA mA mA Holding current V =12V; I =0.1ADG T On-state voltage - Critical rate of rise of off-state voltageCritical rate of change of commutating current Critical rate of change of commutating current dl /dtcom V =400V;T =125 ; I =16A; dV /dt=0.1V/ s;gate open circuit DM j T(RMS) com A/ms Tc=25 Tc=25 Tc=100 Tc=125
3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Three quadrant triacs TM HPM Q6016LH4
HAOPIN MICROELECTRONICS CO.,LTD. Three quadrant triacs TM HPM 4/5http://www.haopin.com Q6016LH4
HAOPIN MICROELECTRONICS CO.,LTD. Three quadrant triacs TM HPM MECHANICAL DATA Dimensions in mm Net Mass: 2 g 5/5http://www.haopin.com Q6016LH4