Q6012RH5 HAOPIN | Alldatasheet

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Features

Main terminal 1 (T1) gate (G) Main terminal 2 (T2) Main terminal 2 (T2) UnitSYMBOL PARAMETER Value VDRM 600 V ITR M S 12 A ITSM 95 A Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current SYMBOL PARAMETER MAX UNITCONDITIONS TYPMIN Simplified outlineSymbol T2 T1 G 1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Q6012RH5 123 TO-220 TM HPM

Description

Passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber. Three quadrant triacs Rthj-mb Rth j-a Thermal resistance Junction to mounting base Junction to ambient K/W -full cycle half cycle -in free air -60Thermal resistance - - K/W K/W1.5 2.0

2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM Limiting values in accordance with the Maximum system(IEC 134) Three quadrant triacs Q6012RH5 SYMBOL PARAMETER CONDITIONS MIN Value UNIT VDRM IT(RMS) ITSM It dI /dtT Repetitive peak off-state voltages RMS on-state current Non repetitive surge peak on-state current I t for fusing Repetitive rate of rise of on-state current after triggering V Full sine wave;T 99 mb full sine wave; T j=2 5 p r i o rt o surge I =20A;I =0.2A , dl /dt=0.2A/ TM G T G s t=20ms t=16.7ms 600 A A A AS 105 - 100 A/ s IGM Tstg Tj PG(AV) Peak gate current Average gate power Storage temperature Operating junction temperature A W Wover any 20 ms period - 2 - 0.5 -40 - 125 150 T =25 C unless otherwise statedJ O IL IH VT dV /dtD Dynamic Characteristics dl /dtcom I =17AT V =67%V ;T =110 ; exponential waveform; gate open circuit DM DRM(max) j V =400V;T =125 ; I =12A; dV /dt=20V/ s;gate open circuit DM j T(RMS) com - 1.6 mA V 40- V/ s A/ms Note 1 : Although not recommended,off-state voltages up to 800V may be applied without damage ,but the triac may swith to the on-state .the rate of current should not exceed 15A/us. Note 2 : Device does not trigger in the T2-,G+ quadrant. t=10ms PGM Peak gate power SYMBOL PARAMETER CONDITIONS MIN Latching current IGT V =12V; I =0.1ADT UNITMAXTYP mA mA mA VGT V Gate trigger current T2+G+ T2+G- T2-G- Gate trigger voltage V =12V; I =0.1A DT DTj 0.25 - 1.5 - V V =12V; I =0.1ADG T T2+G+ T2+G- T2-G- mA mA mA Holding current V =12V; I =0.1ADG T On-state voltage - ID Off-state leakage current V =V ;T =125D DRM(max) j - - 0.5 mA Critical rate of rise of off-state voltage Critical rate of change of commutating current Critical rate of change of commutating current dl /dtcom V =400V;T =125 C; I =12A; dV /dt=0.1V/ s;gate open circuit DM j T(RMS) com O A/ms

3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM Three quadrant triacs Q6012RH5

HAOPIN MICROELECTRONICS CO.,LTD. TM HPM 4/5http://www.haopin.com Three quadrant triacs Q6012RH5

HAOPIN MICROELECTRONICS CO.,LTD. TM HPM MECHANICAL DATA Dimensions in mm Net Mass: 2 g 5/5http://www.haopin.com Three quadrant triacs Q6012RH5