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Page:P2-P1 Plastic-Encapsulate Transistors
FEATURES
Collector current: IC =1.5A MARKING :Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage V CEO -25 V Emitter-Base Voltage V EBO -5 V Collector Current -Continuous IC -1500 mA Collector Power Dissipation PC 1000 mW Junction Temperature TJ 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V CBO IC = 100μA, IE=0 -40 V Collector-emitter breakdown voltage V CEO IC = 0.1mA, I B =0 -25 V Emitter-basebreakdow n voltage V EBO IE= 100μA, IC =0 -5 V Collector cut-off current ICBO V CB = 40 V , I E=0 -0.1 μA Collector cut-off current ICEO V CE = 20 V , I B =0 -0.1 μA Emitter cut-off current IEBO V EB = 5V, I C =0 -0.1 μA DC current gain hFE(1) V CE = -1V, IC = -100mA 85 400 hFE(2) V CE = -1V, I C = -800mA 50 Collector-emitter saturation voltage V CE (sat) IC = -800 mA, IB =-80mA -0.5 V Base-emitter saturation voltage V BE (sat) IC =-800mA, IB =-80mA -1.2 V Base-emittervoltage V BE V CE =-1V ,IC =-10mA -1 V Base-emitter positive favorvoltage V BE F IB =-1A -1. V Transition frequency fT V CE =-10V ,IC =-50mA,f=30MHz 100 MHz output capacitance C ob VCB=-10V,IE=0,f=1MHz 20 pF CLASSIFICA TION OF HFE Rank B C D D1 R ange 85-160 120-200 160-300 300-400 1. BASE 2. COLLECTO SOT-89 3. EMITTER (PNP) PXT8550 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P2 Plastic-Encapsulate Transistors Typical Characteristics PXT8550 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/