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Technical content
Page:P2-P1 Plastic-Encapsulate Transistors
FEATURES
Collector current: IC =1.5A MARKING :Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 25 V Emitter-Base Voltage V EBO 5 V Collector Current -Continuous IC 1500 Collector Power Dissipation PC 1000 Junction Temperature TJ 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V CBO IC = 100μA, IE=0 40 V Collector-emitter breakdown voltage V CEO IC = 0.1mA, I B =0 25 V Emitter-basebreakdow n voltage V EBO IE= 100μA, IC =0 5 V Collector cut-off current ICBO V CB = 40 V , I E=0 0.1 μA Collector cut-off current ICEO V CE = 20 V , I B =0 0.1 μA Emitter cut-off current IEBO V EB = 5V, I C =0 0.1 μA DC current gain hFE(1) V CE = 1V, IC = 100mA 85 400 hFE(2) V CE = 1V, I C = 800mA 50 Collector-emitter saturation voltage V CE (sat) IC = 800 mA, IB =80mA 0.5 V Base-emitter saturation voltage V BE (sat) IC =800mA, IB =80mA 1.2 V Base-emittervoltage V BE V CE =1V ,IC =10mA 1 V Base-emitter positive favorvoltage V BE F IB =1A 1.5 V Transition frequency fT V CE =10V ,IC =50mA,f=30MHz 100 MHz output capacitance C ob VCB=10V,IE=0,f=1MHz 15 pF CLASSIFICA TION OF HFE Rank B C D D1 R ange 85-160 120-200 160-300 300-400 1. BASE 2. COLLECTO SOT-89 3. EMITTER (NPN) mA m W PXT8050 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P2 Plastic-Encapsulate Transistors Typical Characteristics PXT8050 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/