RFCM3328 QORVO | Alldatasheet
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Technical content
45-1218 MHz GaAs/GaN Power Doubler Module POWER DOUBLER MODULE Data Sheet Rev.B, June 28, 2016 | Subject to change without notice 1 of 8 www.qorvo.com 9 pin, 9.0 mm x 8.0 mm x 1.375 mm Key Features Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Low Noise Unconditionally Stable Under all Terminations Extremely High Output Capability 25 dB Min. Gain at 1218 MHz 480 mA Max. at 24 VDC Temperature Sensing Feature Product Overview The RFCM3328 is a Power Doubler amplifier SMD Module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. DC current of the device can be externally adjuste d for optimum distortion performance versus power consumption over a wide range of output level.
Applications
45 MHz to 1218 MHz CATV Amplifier Systems Functional Block Diagram RFCM3328 INPUT OUTPUT Current Setting V+ Temperature Sensing
Ordering Information
Part No. Description RFCM3328SB Sample bag with 5 pieces RFCM3328SQ Sample bag with 25 pieces RFCM3328SR 7” Reel with 100 pieces RFCM3328TR7 7” Reel with 500 pieces RFCM3328TR13 13” Reel with 1000 pieces RFCM3328PCBA-410 Fully Assembled Evaluation Board RFCM3328
45-1218 MHz GaAs/GaN Power Doubler Module Data Sheet Rev.B, June 28, 2016 | Subject to change without notice 2 of 8 www.qorvo.com Absolute Maximum Ratings Parameter Rating RF Input Voltage (single tone; on evaluation board) 75 dBmV DC Supply Over-Voltage (5 minutes) 30 V Storage Temperature −40 to +100 °C Operating Mounting Base Temperature −30 to +110 °C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions(1) Min Typ Max Units Operational Frequency Range 45 1218 MHz Power Gain 45 MHz 23.0 23.5 24.0 dB 1218 MHz 25.0 25.5 26.5 dB Slope(2) 45 MHz to 1218 MHz 1.0 2.0 3.0 dB Flatness of Frequency Response 45 MHz to 1218 MHz (Peak to Valley) 1.5 dB Input Return Loss 45 MHz to 320 MHz -20 dB
320 MHz to 640 MHz -19 dB
640 MHz to 870 MHz -18 dB
870 MHz to 1000 MHz -16 dB
1000 MHz to 1218 MHz -15 dB
Output Return Loss 45 MHz to 320 MHz -18 dB
320 MHz to 640 MHz -17 dB
640 MHz to 1218 MHz -15 dB
Noise Figure 50 MHz to 1218 MHz 2.5 3.5 dB Total Current Consumption (DC) 470 480 mA Thermal Resistance Junction to Mounting Base 3.7 K/W CTB VO = 61 dBmV at 1218 MHz, 22 dB extrapolated tilt, 79 analog channels plus 111 digital channels (-6 dB offset)(3)(5) -80 -74 dBc XMOD -76 -72 dBc CSO -80 -74 dBc CIN 55 58 dB CTB VO = 62 dBmV at 1000 MHz, 18 dB extrapolated tilt, 79 analog channels plus 75 digital channels (-6 dB offset)(4)(5) -73 dBc XMOD -68 dBc CSO -68 dBc CIN 55 dB Notes: 1. Test conditions unless otherwise noted: V+=24 V, TMB=30 °C, ZS=ZL=75 Ω, IDC=IDC typical. 2. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 3. 79 analog channels, NTSC frequency raster: 55.25 MHz to 547.25 MHz, +39 dBmV to +48.3 dBmV tilted output level, plus 111 digital channels, -6 dB offset relative to the equivalent analog carrier. 4. 79 analog channels, NTSC frequency raster: 55.25 MHz to 547.25 MHz, +44 dBmV to +53.4 dBmV tilted output level, plus 75 digital channels, -6 dB offset relative to the equivalent analog carrier. 5. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by ANSI/SCTE 6. Composite Triple Beat (CTB) - The CTB parameter is defined by ANSI/SCTE 6. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
45-1218 MHz GaAs/GaN Power Doubler Module Data Sheet Rev.B, June 28, 2016 | Subject to change without notice 3 of 8 www.qorvo.com RFCM3328 Current Adjustment The RFCM3328 can be operated over a wide range of current to provide maximum required performance with minimum current consumption. Changing the value of resistor R3 on application circuit allows a variation of the current between 470 mA and 350 mA (typ.). Within the recommended range of current between 470 mA and 370 mA gain (S21) change is Device Current versus Resistor R3 (typical values) Device Current [mA], typical R3 [Ω] 470 1500 430 1350 390 1200 350 1050 Test conditions: V+=24 V, TMB=30 °C, ZS=ZL=75 Ω Device Current versus Distortion Degradation (typical values) Test condition: V+=24 V, TMB=30 °C, ZS=ZL=75 Ω; VO = 61 dBmV at 1218 MHz, 22 dB extrapolated tilt, 79 analog channels plus 111 digital channels (-6 dB offset) 340 360 380 400 420 440 460 480 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 I [mA] R3 [Ω] 340 360 380 400 420 440 460 480 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 I [mA] CTB and CIN degradation [dB] CTB CIN
45-1218 MHz GaAs/GaN Power Doubler Module Data Sheet Rev.B, June 28, 2016 | Subject to change without notice 4 of 8 www.qorvo.com RFCM3328 Temperature Sensing Feature The RFCM3328 provides an internal NTC resistor for temperature sensing. This resistor is located right next to the output transistor stage. Within the application circuit the NTC is part of a voltage divider. The output voltage of the voltage divi der (Vt) can be correlated to the module backside temperature. Module Backside Temperature versus Vt (typical values) 100 110 120 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 Temperature [°C] Vt [mV]
45-1218 MHz GaAs/GaN Power Doubler Module Data Sheet Rev.B, June 28, 2016 | Subject to change without notice 5 of 8 www.qorvo.com Evaluation Board Schematic MM3Z5V6T1 FB1 Bead 60Ω 5.6Ω 4.7nF RFXF0006 RFXF0008 5 1 RFCM3328 RF IN - GND GND RF IN + RF OUT - GND Rt RF OUT + GND back side C15 0.1pF C16 0.1pF C18 DNI C17 DNI TGL34-33A 1kΩ 1kΩ 4.7nF 4.7nF 1.2pF 1.2pF C10 0.5pF C14 DNI DNI DNI DNI C19 DNI C11 0.5pF R10 DNI R11 DNI R12 DNI 4.7nF 5.1kΩ 3kΩ 1.5kΩ R13 3.3kΩ C13 4.7nF 220pF DNI C12 0.5pF 4.7nF RFXF0009 4 1 GND Vt RF OUTRF IN Evaluation Board Assembly Drawing Note: The ground plane of the RFCM3328 module should be soldered onto a board equipped with as many thermal vias as possible. Underneath this thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete module DC power (up to 11.3 Watts). In any case the module backside temperature should not exceed 110 °C.
45-1218 MHz GaAs/GaN Power Doubler Module Data Sheet Rev.B, June 28, 2016 | Subject to change without notice 6 of 8 www.qorvo.com Evaluation Board Bill of Materials (BOM) Reference Des. Value Description Manuf. Part Number n/a n/a Printed Circuit Board Qorvo PI844A C1 220 pF Cap., 0402, 50V, NP0/C0G various C2, C3, C6, C7, C8, C13 4.7 nF Cap., 0402, ±10%, 50V, X7R various C4, C5 1.2 pF Cap., 0402, ±0.25pF, 50V, NP0/C0G various C9, C14, C17, C18, C19 DNI Cap., 0402, NP0/C0G(1) various C10, C11, C12 0.5 pF Cap., 0402, ±0.1pF, 50V, NP0/C0G(1) various C15, C16 0.1 pF Cap., 0402, ±0.05pF, 50V, NP0/C0G(1) various R1 5.1 kΩ Res., 0603, ±1%, TK100 various R2 3 kΩ Res., 0402, ±1%, TK100 various R3 1.5 kΩ Res., 0402, ±1%, TK100 various R4 5.6 Ω Res., 0402, ±1%, TK200 various R5, R6 1 kΩ Res., 0402, ±1%, TK100 various R7, R8, R9, R10, R11, R12 DNI Res., 0402, 0Ω(1) various R13 3.3 kΩ Res., 0402, ±1%, TK100 various FB1 60 Ω @ 100 MHz Impedance Bead Taiyo Yuden BK 1608HS600-T D1 TGL34-33A Transient Voltage Suppressor Diode Diotec TGL34-33A D2 5.6 V Zener Diode ON Semiconductor MM3Z5V6T1G T1 RFXF0006 Transformer Qorvo RFXF0006 T2 RFXF0008 Transformer Qorvo RFXF0008 T3 RFXF0009 Transformer Qorvo RFXF0009 U1 RFCM3328 DUT Qorvo RFCM3327 Note: 1. Optional to improve matching in application. Pin Out RF IN + GND GND RF IN - RF OUT + Rt GND RF OUT - GND Top View
45-1218 MHz GaAs/GaN Power Doubler Module Data Sheet Rev.B, June 28, 2016 | Subject to change without notice 7 of 8 www.qorvo.com Package Outline and Branding Drawing (Dimensions in millimeters) 8.000±0.100 PIN 1 Indicator RFCM3328 1.375±0.075 0.275 Ref molding cap substrate 9.000±0.100 A DATA CODE (YEAR/WEEK) YYWW Trace Code A A A A A A A A A= 0.600 x 0.600 mm 0.000 0.650 0.650 2x 2.000 2x 2.000 3.700 3.700 1.000 1.000 0.000 3.400 3.400 4x 4.100 5x 4.100 Pin1 Pin Names and Descriptions Pin Name Description
1 RF IN + RF AMP Positive Input
2, 3, 6 GND Ground pins
4 RF IN - RF AMP Negative Input
5 RF OUT - RF AMP Negative Output
7 V+ Supply Voltage, +24V
8 Rt NTC Output for Temperature Sensing
9 RF OUT + RF AMP Positive Output
45-1218 MHz GaAs/GaN Power Doubler Module Data Sheet Rev.B, June 28, 2016 | Subject to change without notice 8 of 8 www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) Class 1A ESDA / JEDEC JS-001-2012 ESD – Charged Device Model (CDM) Class C1 JEDEC JESD22-C101F MSL – Moisture Sensitivity Level Level 3 IPC/JEDEC J-STD-020 Solderability Solder profiles available upon request. Contact plating: NiPdAu RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electr ical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information con tained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All informatio n contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin g described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO T HE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2016 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Pb