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3 W, 28 V, 3.4 – 3.6 GHz GaN PA Module Data Sheet Rev. B | Subject to change without notice. - 1 of 11 - www.qorvo.com Product Description The QPA3503 is a n integrated 2 -stage Power Amplifier Module designed for massive MIMO applications with 3 W RMS at the device output covering frequency range from 3.4 to 3.6 GHz. The module is 50 Ω input and output and requires minimal external components. The module is also compact and offers a much smaller footprint than traditional discrete component solutions. The QPA 3503 incorporates a Doherty final stage delivering high power added efficiency for the entire module at 3 W average power. RoHS compliant.

36 Pin 6x10 mm Plastic Package

  • Operating Frequency Range: 3.4 - 3.6 GHz
  • Operating Drain Voltage: +28 V
  • 50 Ω Input / Output
  • Integrated Doherty Final Stage
  • Gain at 3 W avg.: 32 dB
  • Power Added Efficiency at 3 W avg.: 33%
  • 6x10 mm Plastic Surface Mount Package

Applications

  • 5G Massive MIMO
  • W-CDMA / LTE
  • Macrocell Base Station Driver
  • Microcell Base Station
  • Small Cell Final Stage
  • Active Antenna
  • General Purpose Applications

Ordering Information

Part No. Description QPA3503SB Sample Bag – 5 Pieces QPA3503SR Short Reel – 100 Pieces QPA3503TR13 13” Reel – 2500 Pieces QPA3503EVB01 Tested 3.4-3.6 GHz EVB

3 W, 28 V, 3.4 – 3.6 GHz GaN PA Module Data Sheet Rev. B | Subject to change without notice. - 2 of 11 - www.qorvo.com Absolute Maximum Ratings2 Parameter Range / Value Units Breakdown Voltage, BVDG 120 V Gate Voltage (VG1,2,3) −7 to +2 V Drain Voltage (VD1,2,3) +40 V RF Input Power (1) +25 dBm VSWR Mismatch, P3dB Pulse (10 % duty cycle, 100 µ width), T = 25 °C 10:1 Storage Temperature −65 to +150 °C 1. Tested at 3.5 GHZ, T = +25°C, single-carrier, 20 MHz LTE signal with 7.8 dB PAR @ 0.01% CCDF. 2. Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units Gate Voltage (VG1) −2.6 V Gate Voltage (VG2) −4.5 V Gate Voltage (VG3) −2.6 V Drain Voltage (VD1,2,3) +28 V Quiescent Current (IDQ1) 50 mA Quiescent Current (IDQ3) 75 mA Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Conditions Min Typ Max Units Frequency Range 3.4 3.6 GHz Driver Quiescent Current 50 mA Carrier Quiescent Current 75 mA Gain PAVG = 34.8 dBm 32 dB P3dB 3 dB PAR compression 44 dBm Power Added Efficiency PAVG = 34.8 dBm 33 % Raw ACLR PAVG = 34.8 dBm −28 dBc Test conditions unless otherwise noted: VD1,2,3 = +28 V, IDQ1 = 50 mA, IDQ3 = 75 mA, VG2 = −4.5 V, T = +25°C, single-carrier, 20 MHz LTE signal with 7.8 dB PAR @ 0.01% CCDF, de-embedded from EVB measurements. Thermal and Reliability Information Parameter Test Conditions Value Units Peak IR Surface Thermal Resistance at Average Power (θJC) TCASE = +85°C, TCH = 101°C CW: PDISS = 6.1 W, POUT = 3 W 2.6 °C / W Notes: 1. Thermal resistance measured to package backside. 2. Based on expected carrier amplifier efficiency of Doherty. 3. POUT assumes 20% peaking amplifier contribution of total average Doherty rated power. 4. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

3 W, 28 V, 3.4 – 3.6 GHz GaN PA Module Data Sheet Rev. B | Subject to change without notice. - 3 of 11 - www.qorvo.com Bill of Materials – QPA3503 3.5 GHz Evaluation Board Reference Des. Value Description Manuf. Part No. C1, C10 220 µF Capacitor, 220 µF, electrolytic 50 V Panasonic EEEFK1H221P C4, C7, C14 22,000 pF Capacitor, 22,000 pF, 10%, 50 V, X7R, 0603 Murata GRM188R71H223KA01D C3, C8, C11, C13 4.7 µF Capacitor, 4.7 µF, 10%, 50 V, X7R, 1206 Murata GRM31CR71H475KA12L C2, C9, C12 10 µF Capacitor, 10 µF, 10%, 50 V, X7R, 1210 Murata GRM32ER71H106KA J1, J2 Connector, SMA, 4-Hole Panel Mount Jack Gigalane PAF-S00-000 P1, P2 Connector, HDR, ST, PLRZD, 5-Pin, 0.100” ITW Pancon MPSS100-5-C P3 Connector, HDR, ST, 3-PIN, T/H Molex 22-28-4033 U1 3W 3.5GHz PA Module Qorvo QPA3503 QPA3503 3.4 – 3.6 GHz Reference Design EVB Layout EVB Schematic PCB Stackup and Material Notes: 1. All dimensions are in inches. 2. PCB is soldered on a 2 inch by 2 inch copper base plate with 0.25 inch thickness.

3 W, 28 V, 3.4 – 3.6 GHz GaN PA Module Data Sheet Rev. B | Subject to change without notice. - 4 of 11 - www.qorvo.com Performance Plots Test conditions unless otherwise noted: VD1,2,3 = +28 V, IDQ1 = 50 mA, IDQ3 = 75 mA, VG2 = −4.5 V, T = +25°C, single-carrier, 20 MHz LTE signal with 7.8 dB PAR @ 0.01% CCDF, de-embedded from EVB measurements. 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Gain (dB) Average Output Power (dBm) Gain vs. Average Output Power IDQ1 = 50 mA, IDQ3 = 75 mA,VG2 = −4.5 V,VD1,2,3 = +28 V, 1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF Temp. = +25°C

3400 MHz

3500 MHz

3600 MHz

27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Power Added Efficiency (%) Average Output Power (dBm) PAE vs. Average Output Power Temp. = +25°C IDQ1 = 50 mA, IDQ3 = 75 mA,VG2 = −4.5 V,VD1,2,3 = +28 V, 1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Peak Power at 0.01% CCDF (dBm) Average Output Power (dBm) Peak Power vs. Average Output Power Temp. = +25°C IDQ1 = 50 mA, IDQ3 = 75 mA,VG2 = −4.5 V,VD1,2,3 = +28 V, 1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 ACPR (dBc) Average Output Power (dBm) ACPR vs. Average Output Power Temp. = +25°C IDQ1 = 50 mA, IDQ3 = 75 mA,VG2 = −4.5 V,VD1,2,3 = +28 V, 1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Gain (dB) Average Output Power (dBm) Gain vs. Average Output Power 1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF Freq = 3500MHz -40 C +25 C +105 C 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Power Added Efficiency (%) Average Output Power (dBm) PAE vs. Average Output Power 1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF Freq = 3500MHz -40 C +25 C +105 C

3 W, 28 V, 3.4 – 3.6 GHz GaN PA Module Data Sheet Rev. B | Subject to change without notice. - 5 of 11 - www.qorvo.com Performance Plots Test conditions unless otherwise noted: VD1,2,3 = +28 V, IDQ1 = 50 mA, IDQ3 = 75 mA, VG2 = −4.5 V, T = +25°C, single-carrier, 20 MHz LTE signal with 7.8 dB PAR @ 0.01% CCDF, de-embedded from EVB measurements. 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Peak Power at 0.01% CCDF (dBm) Average Output Power (dBm) Peak Power vs. Average Output Power -40°C +25°C +105°C 1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF Freq = 3500MHz -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 ACPR (dBc) Average Output Power (dBm) ACPR vs. Average Output Power -40 C +25 C +105 C 1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF Freq = 3500MHz -57.0 -56.5 -56.0 -55.5 -55.0 3350 3400 3450 3500 3550 3600 3650 ACPR (dBc) Frequency (MHz) Linearized ACPR vs. Frequency 1C 20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF Pout = 34.8dBm Temp. = +25°C

3 W, 28 V, 3.4 – 3.6 GHz GaN PA Module Data Sheet Rev. B | Subject to change without notice. - 6 of 11 - www.qorvo.com Pin Configuration and Description Pin No. Label Description

1 VD1 Driver Amplifier, Drain Bias

4 VG1 Driver Amplifier, Gate Bias

6 RF IN RF Input

11 VG3 Carrier Amplifier, Gate Bias

16 VD3 Carrier Amplifier, Drain Bias

19 RF OUT RF Output

27 VD2 Peaking Amplifier, Drain Bias

32 VG2 Peaking Amplifier, Gate Bias

2-3, 5, 7-10, 12-15, 17-18, 20-26, 28-31, 33-36 GND Internal Grounding, recommend connecting to Epad ground EPAD GND DC/RF Ground. Must be soldered to EVB ground plane over array of vias for thermal and RF performance. Solder voids under EPAD will result in excessive junction temperatures causing permanent damage.

3 W, 28 V, 3.4 – 3.6 GHz GaN PA Module Data Sheet Rev. B | Subject to change without notice. - 7 of 11 - www.qorvo.com Package Marking and Dimensions Marking: Qorvo Logo Part Number – QPA3503 Date Code – YYWW Batch Code – MXXX Notes: 1. General tolerance is ±0.100. 2. All dimensions are in mm. Angles are in degrees. 3. Material: Package Base: Laminate Package Lid: Mold 4. Exposed metallization is NiPdAu plated. Au thickness is 0.095 µm. 5. Part is mold sealed.

3 W, 28 V, 3.4 – 3.6 GHz GaN PA Module Data Sheet Rev. B | Subject to change without notice. - 8 of 11 - www.qorvo.com Mounting Footprint Pattern Notes: 1. All dimensions are in mm. Angles are in degrees. 2. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. ALL vias are PTH to ground. 3. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.

3 W, 28 V, 3.4 – 3.6 GHz GaN PA Module Data Sheet Rev. B | Subject to change without notice. - 9 of 11 - www.qorvo.com Tape and Reel Information – Carrier and Cover Tape Dimensions Feature Measure Symbol Size (in) Size (mm) Cavity Length A0 0.248 6.30 Width B0 0.406 10.3 Depth K0 0.061 1.55 Pitch P1 0.472 12.0 Centerline Distance Cavity to Perforation – Length Direction P2 0.079 2.00 Cavity to Perforation – Width Direction F 0.295 7.5 Cover Tape Width C 0.524 13.3 Carrier Tape Width W 0.630 16.0 User Direction of Feed

3 W, 28 V, 3.4 – 3.6 GHz GaN PA Module Data Sheet Rev. B | Subject to change without notice. - 10 of 11 - www.qorvo.com Tape and Reel Information – Reel Dimensions Standard T/R size = 2500 pieces on a 13” reel. Feature Measure Symbol Size (in) Size (mm) Flange Diameter A 12.992 330.0 Thickness W2 0.874 22.2 Space Between Flange W1 0.661 16.8 Hub Outer Diameter N 4.016 102.0 Arbor Hole Diameter C 0.512 13.0 Key Slit Width B 0.079 2.0 Key Slit Diameter D 0.787 20.0 Tape and Reel Information – Tape Length and Label Placement Notes: 1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA 481-1-A. 2. Labels are placed on the flange opposite the sprockets in the carrier tape.

3 W, 28 V, 3.4 – 3.6 GHz GaN PA Module Data Sheet Rev. B | Subject to change without notice. - 11 of 11 - www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) Class 1A ANSI/ESDA/JEDEC Standard JS-001 ESD – Charged Device Model (CDM) Class C3 ANSI/ESDA/JEDEC Standard JS-002 MSL – 260°C Convection Reflow MSL3 IPC/JEDEC Standard J-STD-020 Solderability Compatible with both lead-free (260°C maximum reflow temperature) soldering processes. Package lead plating is NiPdAu. Au thickness is 0.095 µm. RoHS Compliance This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:

  • Product uses RoHS Exemption 7c-I to meet RoHS Compliance requirements.
  • Halogen Free (Chlorine, Bromine)
  • Antimony Free
  • TBBP-A (C15H12Br402) Free
  • PFOS Free
  • SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: www.qorvo.com Tel: 1-844-890-8163 Email: info-sales@qorvo.com For technical questions and application information: Email: BTSApplications@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information con tained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All informatio n contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin g described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2018 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.