P9006EVG

P9006EVG BYCHIP | Alldatasheet

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Technical content

Features

 VDS= - 60V, ID= -12A RDS(ON) < 25mΩ @ VGS = -10V RDS(ON) < 28mΩ @ VGS = -4.5V

• Advanced Trench Technology
• Provide Excellent RDS(ON) and Low Gate Charge
• Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Continuous Drain Current ID -12 A Pulsed Drain Current (note1) I DM -24 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 3 W Single pulse avalanche energy （note2） EAS 110 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 42 ºC/W www.bychip.cn SOP-8 Schematic diagrampin assignment P9006EVG v1.0

Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -3 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -8A -- 25 mΩ gFS VDS = -5V,ID = -8A -- 11 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -30V, f = 1.0MHz -- 2719 -- pFOutput Capacitance Coss -- 174 -- Reverse Transfer Capacitance Crss -- 147 -- Total Gate Charge Qg VDD = -30V, ID = -8A, VGS = -10V -- 49 -- nCGate-Source Charge Qgs -- 10 -- Gate-Drain Charge Qgd -- 13 -- Turn-on Delay Time td(on) VDD = -30V, ID = -8A, RG = 3Ω -- 15 -- ns Turn-on Rise Time tr -- 12 -- Turn-off Delay Time td(off) -- 38 -- Turn-off Fall Time tf -- 15 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -40 A Body Diode Voltage VSD TJ = 25ºC, ISD = -8A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -8A, VGS = 0V di/dt=-100A/us -- 53 -- nC Reverse Recovery Time Trr -- 47 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25 ℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical R G Forward Transconductance www.bychip.cn P9006EVG v2.0

www.bychip.cn P9006EVG v3.0