P6006HV BYCHIP | Alldatasheet
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Features
VDS= 60V, ID= 5 A RDS(ON) < 30 mΩ @ VGS = 10V RDS(ON) < 36 mΩ @ VGS = 4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features SOP-8 (Dual) Schematic diagram www.bychip.cnPin Assignment P6006HV v1.0
Electrical Characteristics(TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)DSS Drain-Source Breakdown Voltage V GS=0V, ID=250μA 60 - - V IDSS Zero Gate Voltage Drain Current V DS=60V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current V DS=0V, VGS = ±20V - - ±100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 2.5 V RDS(on) Static Drain-Source on-Resistance note3 VGS=10V, ID=5A - 30 mΩVGS=4.5V, ID=3A - 36 Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1.0MHz - 853 - pF Coss Output Capacitance - 60 - pF Crss Reverse Transfer Capacitance - 29 - pF Qg Total Gate Charge VDD=30V, ID=2.5A, VGS=10V - 20 - nC Qgs Gate-Source Charge - 3 - nC Qgd Gate-Drain(“Miller”) Charge - 4.5 - nC Switching Characteristics td(on) Turn-on Delay Time VDD=30V, ID=5A, RGEN=1.8Ω, VGS=10V - 6 - ns tr Turn-on Rise Time - 6 - ns td(off) Turn-off Delay Time - 19 - ns tf Turn-off Fall Time - 2.5 - ns Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 20 A VSD Drain to Source Diode Forward Voltage VGS=0V, IS=5A - - 1.2 V trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/μs - 13 - ns Qrr Body Diode Reverse Recovery Charge - 9 - nC Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition :Starting TJ=25℃,VDD=30V,VGS=10V,L=0.5mH,Rg=25Ω,IAS=9A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% www.bychip.cn P6006HV v2.0
Typical Performance Characteristics 0 1 2 3 4 5 Figure 1: Output Characteristics VDS(V) 0 1 2 3 4 5
0 VGS(V)
Figure 2: Typical Transfer Characteristics ID (A) ID (A) Figure 3: On-resistance vs. Drain Current DS(ON) (mΩ)R ID(A) 0 4 8 12 16 20 0 2 4 6 8 10 12 Figure 5: Gate Charge Characteristics Figure 4: Body Diode Characteristics IS(A) VSD(V) Qg(nC) VGS(V) 125℃ 125℃ VGS=2.5V 25℃ 25℃ 10V 4.5V 3.5V VGS=4.5V VGS=10V VDD=30V ID=2.5A 0 10 20 30 40 50 VDS(V) Coss Crss Ciss 104 103 101 Figure 6: Capacitance Characteristics C(pF) 102 0.1 1.0 www.bychip.cn P6006HV v3.0