P2804NVG BYCHIP | Alldatasheet

Document overview

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Technical content

Features

  • Advanced Trench Technology
  • Provide Excellent RDS(ON) and Low Gate Charge
  • Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features
  • N-Channel: 60V, 6A RDS(ON)< 30 mΩ@ VGS = 10V RDS(ON) <33 mΩ@ VGS = 4.5V
  • P-Channel: -60V, -6A RDS(ON)< 37 mΩ@ VGS = -10V RDS(ON) < 45 mΩ @ VGS = -4.5V SOP-8 Dual Schematic diagram N-Channel and P-Channel Enhancement Mode Power MOSFET www.bychip.cn Pin $ssignment P2804NVG v1.0

NMOS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µ A 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V, TJ = 25ºC -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µ A 1.0 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 6A -- 30 mΩ VGS = 4.5V, ID = 4A -- 33 Forward Transconductance gFS VDS=5V,ID=6A -- 12.5 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 1350 -- pFOutput Capacitance Coss -- 54 -- Reverse Transfer Capacitance Crss -- 51 -- Total Gate Charge Qg VDS = 30V, ID = 5A, VGS = 10V -- 22 -- nCGate-Source Charge Qgs -- 3.3 -- Gate-Drain Charge Qgd -- 5.2 -- Turn-on Delay Time td(on) VDD = 30V, ID = 5A, RG = 3Ω -- 5.2 -- ns Turn-on Rise Time tr -- 3 -- Turn-off Delay Time td(off) -- 17 -- Turn-off Fall Time tf -- 2.5 -- Drain-Source Body Diode Characteristics Body Diode Voltage VSD TJ = 25ºC, ISD = 6A, VGS = 0V -- -- 1.2 V Continuous Body Diode Current IS TC = 25ºC -- -- 6 A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.bychip.cn P2804NVG v2.0

www.bychip.cn P2804NVG v3.0

PMOS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µ A -60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V, TJ = 25ºC -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µ A -1.5 -3.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -5A -- 37 mΩ Forward Transconductance gFS VDS=-5V,ID=-5A -- 9 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -30V, f = 1.0MHz -- 2610 -- pFOutput Capacitance Coss -- 114 -- Reverse Transfer Capacitance Crss -- 111 -- Total Gate Charge Qg VDD = -30V, ID = -5A, VGS = -10V -- 25 -- nCGate-Source Charge Qgs -- 4 -- Gate-Drain Charge Qgd -- 7 -- Turn-on Delay Time td(on) VDD = -30V, ID = -5A, RG = 6Ω -- 15 -- ns Turn-on Rise Time tr -- 58 -- Turn-off Delay Time td(off) -- 30 -- Turn-off Fall Time tf -- 36 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -6 A Body Diode Voltage VSD TJ = 25ºC, ISD = -5A, VGS = 0V -- -- -1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.bychip.cn P2804NVG v6.0

www.bychip.cn P2804NVG v7.0