P0531961H EUDYNA | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

  • 1.9 GHz frequency band
  • Typical 33.5 dBm output power
  • Low power consumption 11 W typ.
  • Excellent adjacent leakage power
  • Typical 33 dB power gain
  • Cost-effective metal package
  • Low thermal resistance structure

Applications

  • Final stage power amplifier of base station for PHS The P0531961H is a high performance 1.9 GHz band power amplifier module capable of 33.5 dBm output power with a typical 33 dB gain at 1.9 GHz band, housed in a cost effective metal package. This device features a low power consumption owing to the excellent linear- ity and high gain of the pulse-doped GaAs MESFET developed by SEI, dissipating 1100 mA typical. It operates from +10 V and -5 V power supplies. P0531961H

1.9 GHz band

03.06.04

Power Amplifier Module P0531961H ♦♦♦♦♦ Absolute Maximum Ratings Case Temperature Tc=25 °C ♦♦♦♦♦ Electrical Specifications Case Temperature Tc=25 °C Notes: Operating of this device above any one of these parameters may cause permanent damage. *Vg1,Vg2=-5V Parameter Symbol Test Conditions Frequency Supply Current (under operation) Power Gain Harmonic Distortion Gate Current Input VSWR Id f Ga 2f0 3f0 Ig Value Min. Typ. Max. Units

1920 MHz

-40 2.5 mA dBc-36-50 1250 —1 1 0 0 1.5 33 — Pout=33.5 dBm Vd1=10 V Vd2=10 V Vg1=-5 V Vg2=-5 V -50 Adjacent Channel Leakage Power Padj1 Padj2 -68 -64 dBc dBc 600 kHz offset 900 kHz offset -72 -69 ρin Parameter Symbol Value Units DC Supply Voltage 12 * V - 7 V Input Power Operating Case Temperature Topt -20 to + 80 °C Storage Temperature Tstg -40 to + 95 °C Vd1, Vd2 Vg1, Vg2 Pin 10 dBm

Power Amplifier Module P0531961H ♦ Power Characteristics ♦ Harmonic Distortion -10 -5 0 5 10 Pout(dBm) Ga(dB) Pin (dBm) Pout (dBm), Gain (dB) f=1900 MHz Vd1=Vd2=10 V Vg1=Vg2=-5 V -90 -80 -70 -60 -50 -40 -30 24 26 28 30 32 34 36 Pout(dBm) 2fo 3fo 2fo, 3fo (dBc) f=1900 MHz Vd1=Vd2=10 V Vg1=Vg2=-5 V

Power Amplifier Module P0531961H ♦ Adjacent Channel Leakage Power, Reverse IM3 f=1900 MHz Vd1=Vd2=10 V Vg1=Vg2=-5 V RIM3:f2=f1+2.7MHz Pin2=-10dBm -90 -85 -80 -75 -70 -65 -60 24 26 28 30 32 34 36 Pout (dBm) Padj600kHz offset Padj900kHz offset RIM3 Padj , RIM3 (dBc)

Power Amplifier Module P0531961H (1) RFout (2) Vd2 (3) Vg2 (4) Vd1 (5) Vg1 (6) RFin Case: GND ♦♦♦♦♦ Package Drawings (Dimensions are mm) Electron Device Department P0531961H 29.0 26.4±0.1 22.0 13.0 5.0 4-R1.2 2.4 9.02.0 2.0 1.8 // 0.1 A A SUMITOMO ELECTRIC :Lot No. Dimensions are mm 1.2 0.25 4.0±0.5 2.0 2.5 2.5 22.0±0.1 2.5 2.5 2.57.5

Power Amplifier Module P0531961H ♦ Evaluation Board Layout (Dimensions are mm) KP009J 44.2 RFout RFin Vg1Vd1Vd2 Vg2 RFout RFin Vd2 Vg Vg1Vd1 RF in RFout Vd2 Vg2 Vd1 DESIGNATION VALUE C1 1 µF C2 0.1µF Vg1 C2 C2 C2 C2 C1 C1