FMM5117X EUDYNA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
20-32GHz Downconverter MMIC Edition 1.3 May 2003
FEATURES
- Integrated Monolithic Downconverter
- High Linearity
- Single Supply Voltage Operation
- High Reliability
DESCRIPTION
The FMM5117X is a double, single balanced diode mixer downconverter designed for applications in the 20 to 32GHz frequency range. The device consists of a low noise mixer, LO amplifier, and LO frequency doubler. This downconverter is uniquely suited for point-to-point radios, local multi-point distribution systems (LMDS) and satellite communications, as it offers a high dynamic range over a large bandwidth. Parameter DC Supply Voltage Input Power Storage Temperature Symbol VDD1,2 8 -65 to +175 V dBm °CTstg PinLO Input Power 20 dBmPinRF Rating Unit ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Conditions Unit ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Limits Typ. Max.Min. Conversion Gain Flatness (fixed fLO, swept fIF) (fLO=13.5GHz) ∆Gd B -- 2 RLRF, RLLOReturn Loss (RF/LO) dB-12- Input P1dB at RF Port P1dBRFIN dBm-15- 3rd Order Input Intercept Point IIP3 dBm-23- DC Current Consumption IDC mA150100- RF Current Consumption IRF mA200140- LO Frequency Range GHzfLO 9.5 - 16.5 RF Frequency Range fRF GHz20 - 32 IF Frequency Range (Note 2) GHzfIF 0.1 - 3 Conversion Gain dBG -18 -10 - Conversion Gain Flatness (fixed fIF, swept fLO) (fIF=1.0GHz) -5- d B∆G Return Loss (IF) RLIF dB-4- VDD1,2=5V, VGG=0V, PLO=3dBm, PRF=0dBm Note 1: The electrical characteristics are measured on a sample basis at 10pcs./wafer. Criteria: (accept/reject)=(0/1) Note 2: The IF frequency range is dependent on the selected LO and RF frequency. Item Symbol Unit RECOMMENDED OPERATING CONDITIONS Recommend Typ. Max.Min. Operating Backside Temperature °CTbs -45 25 110 Input LO Power Level PinLO dBm0.0 3.0 5.0 DC Supply Voltage VVDD1,2 5.0 Note 1: This product should be hermetically packaged.
20-32GHz Downconverter MMIC fLO=13GHz IF RETURN LOSS vs. FREQUENCY 2.5 3 3.510.5 2 1.5 4 IF Frequency (GHz) IF Return Loss (dB) VDD1,2=5V, PLO=3dBm, PRF=0dBm CONVERSION GAIN (LSB) vs. FREQUENCY 26 28 30 342018 24 22 32 36 -18 -16 -14 -12 -10 2 x LO Frequency (GHz) Conversion Gain (LSB) (dB) -20 fIF=1GHz fIF=2GHz fIF=3GHz VDD1,2=5V, PLO=3dBm, PRF=0dBm fIF=1GHz fIF=2GHz fIF=3GHz 26 28 30 342018 24 22 32 36 Conversion Gain (USB) (dB) CONVERSION GAIN (USB) vs. FREQUENCY -20 -18 -16 -14 -12 -10 2 x LO Frequency (GHz) IM3 vs. FREQUENCY 131191 5 -40 -50 -60 -30 -20 -10 LO Frequency (GHz) IM3 Suppression (dBc) / IIP3 (dBm) IIP3 VDD1,2=5V, fIF=1GHz ∆f=10MHz PLO=3dBm, PRF=0dBm, IM3 RF Return Loss; fIF=1GHz RF RETURN LOSS vs. FREQUENCY 28 30 322220 26 24 -25 -20 -15 -10 RF Frequency (GHz) RF Return Loss (dB) 2xLO OUTPUT POWER vs. FREQUENCY 11 12 13109 1 41 51 61 7 -40 -35 -30 -25 -20 -15 -10 LO Frequency (GHz) 2x LO Output Power (dBm)@RF Port VDD1,2=5V PLO=3dBm, PRF=0dBm, fIF=1GHz,
20-32GHz Downconverter MMIC FUNCTIONAL DIAGRAM BONDING DIAGRAM C=220pF VDD1,2=5V VGG=GND LORF IF RF IN IF OUT LO IN
20-32GHz Downconverter MMIC CHIP OUTLINE 190 460 1690 1775 2045 2260 0190 1195 2135 2300 2865 3085 LO RF VGG VDD1 VDD2 IF Chip Size: 3.085mm x 2.26mm Chip Thickness: 110µm (Typ.) Pad Dimensions: 1. RF: 80 x 160µm 2. V DD1: 80 x 80µm 3. V DD2: 100 x 100µm 4. LO: 80 x 160 µm 5. V GG: 100 x 100µm 6. IF: 80 x 120 µm Unit: µm Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put this product into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. CAUTION FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0502M200