F0513005L EUDYNA | Alldatasheet

Document overview

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  • PDF pages: 13

Technical content

  • Up to 3 Gb/s high speed operation
  • Positive thermal coefficient of modulation current
  • Differential ECL compatible interface
  • -5.2 V single power supply
  • Up to 50 mA p-p modulation current
  • Up to 50 mA bias current
  • Maximum bias current preset control
  • Low-cost 18-terminal LCC package

Applications

  • Laser diode driver of an optical transmitter circuit up to 3 Gb/s ♦♦♦♦♦ Functional Description The F0513005L is a high performance GaAs integrated laser diode driver for use in an optical transmitter circuit up to 3 Gb/s NRZ data rate. The F0513005L typically specifies rise time and fall time of 140 psec (10 % - 90 %). It features single -5.2 V supply operation, 1 to 50 mA presettable bias current and up to 50 mA modulation current while dissipating 650 mW is typical. A choice of three packages are available to match various application re- quirements: an 18-terminal leadless chip carrier (LCC) called F0513005L, an 18-lead metal- based flat package (MFP) called F0513005M, and a 20-lead plastic-molded QFP package called F0513005S. 01.08.28 Laser Diode Driver

3 Gb/s NRZ Data Rate

F0513005L3 Gb/s Laser Diode Driver ♦♦♦♦♦ Absolute Maximum Ratings Ta = 25 °C, unless specified ♦♦♦♦♦ Recommended Operating Conditions Ta = 25 °C, VSS = - 5.2 V, unless specified retemaraPl obmySe ulaVs tinU egatloVylppuSV SS 5.0ot7-V noitapissiDrewoPs idP1 W egatloVtupnIV 1NI V, 2NI 5.0ot3-V egatloVtuptuOV 1TUO V, 2TUO 5.0ot3-V egatloVlortnoCtnerruCnoitaludoMV M V SS Vot SS 3.1+V gnitteStnerruCsaiBmumixaM egatloV VB V SS Vot SS 1+V egatloVCPAV 1CPA V, 2CPA 5.0ot3-V erutarepmeTegarotSg tsT5 21+ot55-C ° erutarepmeTgnitarepOtneibmAT a 07+ot0-C ° Parameter Symbol Value Units Min. Typ. Max. Supply Voltage -5.5 -5.2 -5.0 V Output Voltage V OUT1 , VOUT2 -2.0 -1.0 0 V Ambient Operating Temperature Ta 0 25 70 °C VSS

3 Gb/s Laser Diode Driver F0513005L

♦♦♦♦♦ Electrical Characteristics Ta = 25 °C, VSS = - 5.2 V, unless specified (1) except modulation current (2) IMTC = 100× [ IM (Ta = 70 °C) - IM (Ta = 0 °C) ] / IM (Ta = 25 °C) / 70 NOTES: 1. Modulation circuit on: VIN1 = - 1.7 V, VIN2 = - 0.9 V 2. Modulation circuit off: VIN1 = - 0.9 V, VIN2 = - 1.7 V 3. Bias circuit on: VAPC1 = 0 V, VAPC2 = - 2.5 V 4. Bias circuit off: VAPC1 = - 2.5 V, VAPC2 = 0 V retemaraPl obmySs noitidnoCtseT eulaV stinU .niM. pyT. xaM )1(tnerruCtiucriCI SS VM V2.5-=BV,V2.5-=- 5 70 11A m egatloVtupnI V HI edoMlaitnereffiD 9.0-- 7 .0-V V LI 9.1-- 7 .1-V tnerruCtupnII 1NI I, 2NI V 1NI V, 2NI V9.1-=0 51-- 0 51 µA tnerruCnoitaludoM I XAMM V 1NI V,V7.1-= 2NI V9.0-= V 1CPA V,V5.2-= 2CPA V0= VM V,V9.3-= B V2.5-= 05- - A m I NIMM V 1NI V,V7.1-= 2NI V9.0-= V 1CPA V,V5.2-= 2CPA V0= VM V,V5.2-= B V2.4-= -- 1 A m IM )2(tneiciffeoClamrehTI CTM IM T(Am05ot52= a )C°52= Ta C°07ot0= 0- 6 .0C °/% tnerruCsaiB I XAMB V 1NI V,V9.0-= 2NI V7.1-= V 1CPA V,V0= 2CPA V5.2-= VM V,V2.5-= B V2.4-= 05- - A m I NIMB V 1NI V,V9.0-= 2NI V7.1-= V 1CPA V,V5.2-= 2CPA V0-= VM V,V2.5-= B V2.5-= -- 1 A m emiTesiRr t5 2=LR Ω %09-%01- - 0 02s p emiTllaFf t5 2=LR Ω %09-%01- - 0 02s p

F0513005L3 Gb/s Laser Diode Driver 12 13 14 15 16 1811 8 7 654 3 No.1 LEAD IDENTIFIER ♦♦♦♦♦ Pin Assignments (Bottom View) ♦♦♦♦♦ Pin Descriptions

1 OUT1 Output

Maximum Bias Current (IBMAX )Setting Voltage 5V SS Supply Voltage

6 GND Supply Voltage

7V M Modulation Current Control Voltage 8V APC2 APC Reference Voltage 9N C No Connection

10 OUT2 Output

11 NC No Connection

IN2 Differential Mode Input

13 GND Supply Voltage

14 NC No Connection

15 NC No Connection

17 V IN1 Differential Mode Input

18 GND Supply Voltage

(2) AC Characteristics (1) DC Characteristics VIN1 VAPC1 VAPC2 VB VIN2 VM GND V SS OUT 2OUT 1 F0513005L -5.2V 4400pF OUT 2OUT 1 F0513005L -5.2V 4400pF VIN1 VIN2 VM GND V SS VAPC1 VAPC2 VB 50Ω 25Ω 50Ω 50Ω Sampling Oscilloscope Pulse Pattern Generrator

F0513005L3 Gb/s Laser Diode Driver ♦♦♦♦♦ Typical DC Characteristics (1) Switching characteristics Control Voltage VM (V) (VB=-5.2V, VAPC1=-2.0V, VAPC2=0V) (VIN1=-1.8V, VIN2=-0.8V) Control Voltage VB (V) (VM=-5.2V, VAPC1=0V, VAPC2=-2.0V) (VIN1=-0.8V, VIN2=-1.8V) (a) Modulation Current Switching (b) Output Current Switching Modulation Current IM (mA) Output Current IOUT (mA) 100 100 Input Voltage VIN1(V) (VB=-5.2V, VAPC1=-2.0V,VAPC2=-0V) Input Voltage VIN1(V) (VB=-5V, VAPC1=-1.3V,VAPC2=-1.3V) VM=-4.2V VM=-4.5V VM=-3.9V VM=-4.2V VM=-4.5V VM=-3.9V Modulation Current IM (mA) 100 100 Maximum Bias Current IBMAX (mA) (a) Modulation Current vs VM (b) Maximum Bias Current ns VB

(2) Bias control by APC voltage APC Voltage VAPC1 (V) (VM=-5.2V, VB=-5.2V) (VAPC2=-3.0V to 0V, step 0.5V) (3) Dependence on modulation current on the ambient temperature Temperature (°C) (VIN1=-1.8V, VIN2=-0.8V) (VB=-5.2V, VAPC1=-2.0V, VAPC2=0V) (a) IBMAX=20mA (b) I BMAX=50mA Bias Current IB (mA) Bias Current IB (mA) 50.0 5.0/div 0.0 50.0 5.0/div 0.0 -0.5 VAPC2 (V) VAPC2 (V) APC Voltage VAPC1 (V) (VM=-5.2V, VB=-5.2V) (VAPC2=-3.0V to 0V, step 0.5V) IM (mA) -40 20 0 20 40 60 80

F0513005L3 Gb/s Laser Diode Driver ♦♦♦♦♦ Typical AC Characteristics (1) Eye diagrams for pseudo-random data response of electrical output Ta = 25 °C, VSS = - 5.2 V, VIN = 0.8 Vp-p, RL = 25 Ω (a) 1 Gb/s NRZ (PRBS 223-1) 20 mV/div 200 psec/div 50 psec/div 20 mV/div (b) 3 Gb/s NRZ (PRBS 223-1)

(1) Example of circuit block diagram to drive laser diode (2) Eye diagrams for 2.4 Gb/s NRZ pseudo-random data response of optical output PRBS 223-1, Ta = 25 °C, VSS = - 5.2 V, Vin = 0.8 Vp-p, RL = 25 Ω *Laser Diode: Mitsubishi FU-63SDF NOTE : The 10 Ω and 25Ω resistors in series with OUT1 and OUT2 respectively are damping resistors. Their values are selected to minimize ringing caused by the impedance mismatch to the laser diode. These values may change depending upon the type of laser diode used. O/E Converter OUT 2OUT 1 F0513005L -5.2V 4400pF VIN1 VIN2 VM GND V SS VAPC1 VAPC2 VB 10Ω 25Ω 50Ω 50Ω Sampling Oscilloscope Pulse Pattern Generator

F0513005L3 Gb/s Laser Diode Driver (3) Example of APC circuit (4) Example of evaluation board NOTE: The open circles indicate soldering positions for coaxial cables. Islands A and B are termination resistors bias points. When driven from Picologic, they should be connected to -2 V. Otherwise, they may be connected to ground. 1.6k 8.8k 8.8k .027µ .027µ .027µ -4.4V -4.4V -1.5V D ATA D ATA 50 50 50 10 GND OUT1 OUT2 VSS VIN1 VAPC1 VAPC2VIN2 VM VB 4400p F0513005L 1.6k 7.5k 18.5k -5.2V-5.2V-5.2V 7.5k12.5k13.5k 14k 12k 18.5k *LM324 10k10k 10k 240k *** .027µ.027µ.027µ.027µ -2.4V -1.5V-2.7V 1.1k 200 monitor PD LD

♦♦♦♦♦ General Description Bias current and modulation current are very important electrical characteristics in a la- ser diode. A center value of the driving current of a laser diode is bias current, which is designed to be presettable ranging from 1 to 50 mA by a controlled voltage of V B terminal according to the threshold current of an employed laser diode and the application. An optical output power is proportional to an amplitude of the driving current of a laser diode called modulation current which can be controlled from 1 to 50 mA by a voltage of V M terminal. Protection against laser thermal runaway is provided by auto power control. VAPC terminal is used to control the bias current setting negative feedback, monitoring the optical output power by PIN photo diode. Positive Temperature Characteristics The most remarkable feature of the F0513005L, which can not be found in other IC's, is the positive temperature characteristics of the modulation current designed to be +0.5 %/°C. Emission efficiency in typical laser diodes exhibits negative temperature characteristics; their optical output decreases with increasing ambient temperature. In the case of multi- quantum well (MQW) laser diodes, which is the focus of keen interest, the temperature coef- ficient of -0.5 %/°C is reported. The F0513005L can successfully compensate the tempera- ture fluctuation of the optical output power, providing a stable extinction ratio. If a driver circuit does not have a positive temperature characteristic in the modulation current, the bias current increases above the threshold current at higher temperature, resulting in degradation of the extinction ratio. It is not impossible to achieve this kind of compensation by external circuits; it is, however, unrealistic owing to inevitably troublesome tuning. User-friendly Design The F0513005L features a user-friendly design for system designers, permitting a single +5 V power supply operation. A differential ECL compatible input for direct control from ECL or conventional GaAs logic IC's is provided. Two unique auto power controls (V APC1, VAPC2) permit modulation of the bias current control setting as a mechanism to protect the laser diode against thermal runaway. The APC controls may be modulated at rates up to 100 MHz.

F0513005L3 Gb/s Laser Diode Driver The F0513005L is in an 18-terminal ceramic LCC package about 300 mil square with the lead pitch of 50 mil, achieving miniaturization and low cost. It is convenient for design- ers to miniaturize the circuit area in the PCB owing to the leadless package with small dimension. The F0513005M packaged in an 18-lead ceramic MFP about 300 mil square with the lead pitch of 40 mil is also available as another choice for this device, allowing to enhance the flexibility of assembling design. It was originally developed by SEI to improve RF performance and heat radiation. Compared with the LCC, the ground potential is stabler at microwave frequency range and the thermal resistivity is smaller due to the metal- based bottom structure made from CuW (an alloy of copper and tungsten) with a high thermal conductivity. The electrical characteristics of both IC's are almost equal but the system performance depends on the assembling design. The F0513005M is more suit- able for application requiring very excellent eye pattern performance and severe thermal stability. Precautions Owing to their small dimensions, the GaAs FET's from which the F0513005L is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equip- ment.

0.60 TYP

0.41 TYP 2.30 TYP 6.35±0.2

0.80 TYP

0.97 TYP

1.27 TYP

0.22-R TYP 6.35±0.2 (1) All dimensions in millimeters. (2) Package is made of ceramic. (3) Leads are Ni and Au plated copper. (4) Base metal is copper tungsten. Notes: Electron Device Department