ESM5068VU

ESM5068VU EUDYNA | Alldatasheet

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Technical content

X-Band Power Amplifier MMIC Edition 1.2 June 2005 1 ES/EMM5068VU Device の写真 Preliminary

FEATURES

・High Output Power: Pout=33.0dBm (typ.) ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU)

DESCRIPTION

The EMM5068VU is a MMIC amplifier that contains a three-stages amplifier, internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. Eudyna Devices’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Symbol Unit Drain-Source Voltage V DD V Gate-Source Voltage V GG V Input Power P in dBm Channel Temperature T ch oC Storage Temperature T stg oC RECOMMENDED OPERATING CONDITIONS Item Symbol Unit Drain-Source Voltage V DD V Drain-Source Current I DD mA Input Power P in dBm Operating Case Temperature Top oC ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25oC) Unit Min. Typ. Max. Frequency Range f VDD=6V 9.5 - 13.3 GHz Output Power at 1dB G.C.P. P1dB IDD=1300mA 31 *1 33*1 -d B m Zs=Zl=50ohm 28 *2 30*2 - Power-added Efficiency at 1dB G.C.P. ηadd -2 1 *1 -% -1 3 *2 - Third Order Intermodulation* IM 3 *3:∆f=10MHz , -37 *3 -40*3 -d B c Drain Current at 1dB G.C.P. I DD 2-Tone Test, - 1700 *1 2400*1 mA Pout=20dBm S.C.L. - 1500 *2 2400*2 mA Input Return Loss (at Pin=-20dBm) RL in -- 8- d B Output Return Loss (at Pin=-20dBm) RL out -- 8- d B ESD Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ ) CASE STYLE VU Rating +175 -55 to +125 1300 <=12 Class 0 ~ 199 V Conditions LimitsTest ConditionsItem Symbol -40 to +85

VDD=6V, IDD(DC)=1300mA -8 -4 0 4 8 12 16 Input Power [dBm] Output Power [dBm] 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 Drain Current [mA] 9.5G Hz 11.7G Hz 13.3G Hz VDD=6V, IDD(DC)=1300mA 8 9 10 11 12 13 14 15 Frequency[GHz] Power Added Efficiency[%] VDD=6V, IDD(DC)=1300mA 8 9 10 11 12 13 14 15 Frequency[GHz] Output Power[dBm] X-Band Power Amplifier MMIC ES/EMM5068VU Preliminary OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER OUTPUT POWER vs. FREQUENCY Pin=-4dBm Pin=0dBm Pin=+4dBm Pin=+10dBm P1dB POWER ADDED EFFICIENCY vs FREQUENCY Pin=-4dBm Pin=0dBm Pin=+4dBm Pin=10dBm P1dB

V DD=6V , IDD(DC)=1300m A -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 17 19 21 23 25 27 29 31 2-Tone Total Output Power [dBm] Intermodulation Distortion [dBc] 9.5GHz 11.7GHz 13.3GHz V DD=6V , IDD(DC)=1300m A, Pout=20dBm S.C.L. -70 -65 -60 -55 -50 -45 -40 -35 8 9 10 11 12 13 14 15 Frequency [GHz] Intermodulation Distortion [dBc] X-Band Power Amplifier MMIC ES/EMM5068VUPreliminary IMD vs. FREQUENCY IMD vs OUTPUT POWER IM5 IM3 IM5 IM3

IDD(DC)=1300mA @13.3G Hz -8 -4 0 4 8 12 16 Input Power [dBm] Output Power [dBm] 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 Drain Current [mA] IDD(DC)=1300mA @11.7GHz -8 -4 0 4 8 12 16 Input Power [dBm] Output Power [dBm] 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 Drain Current [mA] IDD(DC)=1300mA @9.5GHz -8 -4 0 4 8 12 16 Input Power [dBm] Output Power [dBm] 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 Drain Current [mA] IDD(DC)=1300mA 34567 VDD [V] P1dB [dBm] G1dB [dB] 9.5G Hz 11.7GHz 13.3GHz X-Band Power Amplifier MMIC ES/EMM5068VU Preliminary OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage OUTPUT POWER, GAIN vs. DRAIN VOLTAGE OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage

VDD=6V 1000 1100 1200 1300 1400 Drain Current [mA] P1dB [dBm] G1dB [dB] 9.5G Hz 11.7G Hz 13.3G Hz VDD=6V @13.3G Hz -8 -4 0 4 8 12 16 Input Power [dBm] Output Power [dBm] 700 900 1100 1300 1500 1700 1900 2100 2300 2500 Drain Current [mA] 1100mA 1300mA 1100 A VDD=6V @11.7G Hz -8 -4 0 4 8 12 16 Input Power [dBm] Output Power [dBm] 700 900 1100 1300 1500 1700 1900 2100 2300 2500 Drain Current [mA] 1100mA 1300mA 1100 A VDD=6V @9.5GHz -8 -4 0 4 8 12 16 Input Power [dBm] Output Power [dBm] 700 900 1100 1300 1500 1700 1900 2100 2300 2500 Drain Current [mA] 1100mA 1300mA 1100 A X-Band Power Amplifier MMIC ES/EMM5068VUPreliminary OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Current OUTPUT POWER, GAIN vs. Drain Current OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Current OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Current

IDD(DC)=1300mA @13.3GHz -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 17 19 21 23 25 27 29 31 2-Tone Total Output Power [dBm] Intermodulation Distortion [dBc] IDD(DC)=1300m AV @11.7GHz -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 17 19 21 23 25 27 29 31 2-Tone Total Output Power [dBm] Intermodulation Distortion [dBc] IDD(DC)=1300mA @9.5GHz -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 17 19 21 23 25 27 29 31 2-Tone Total Output Power [dBm] Intermodulation Distortion [dBc] X-Band Power Amplifier MMIC ES/EMM5068VU Preliminary IMD PERFORMANCE vs OUTPUT POWER by Drain Voltage IM5 IM3 IM5 IM3 IM5 IM3 IMD PERFORMANCE vs OUTPUT POWER by Drain Voltage IMD PERFORMANCE vs OUTPUT POWER by Drain Voltage

V DD=6V @13.3GHz -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 17 19 21 23 25 27 29 31 2-Tone Total Output Power [dBm] Intermodulation Distortion [dBc] 1100m A 1300m A VDD=6V @11.7GHz -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 17 19 21 23 25 27 29 31 2-Tone Total Output Power [dBm] Intermodulation Distortion [dBc] 1100mA 1300mA V DD=6V @9.5GHz -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 17 19 21 23 25 27 29 31 2-Tone Total Output Power [dBm] Intermodulation Distortion [dBc] 1100mA 1300mA 1100 A X-Band Power Amplifier MMIC ES/EMM5068VUPreliminary IMD PERFORMANCE vs OUTPUT POWER by Drain Current IM5 IM3 IM5 IM3 IM5 IM3 IMD PERFORMANCE vs OUTPUT POWER by Drain Current IMD PERFORMANCE vs OUTPUT POWER by Drain Current

VDD=6V, IDD(DC)=1300mA -50 -25 0 25 50 75 100 Temperature [oC] Psat [dBm] @Pin=12dBm Gain [dB] @Pin=-6dBm 9.5G Hz 11.7G Hz 13.3G Hz X-Band Power Amplifier MMIC ES/EMM5068VU Preliminary OUTPUT POWER, GAIN vs. TEMPERATURE

-40 -30 -20 -10 9 1 01 11 21 31 4 Frequency [GHz] Input/Output Return Loss [ dB ] X-Band Power Amplifier MMIC ES/EMM5068VUPreliminary ■■■■S-PARAMETER VDD=6V, IDD(DC)=1300mA - Input Return Loss - Output Return Loss Input/Output Return Loss vs. Frequency VDD=6V, IDD=1300mA Small Signal Gain vs. Frequency VDD=6V, IDD=1300mA 9 1 01 11 21 31 4 Frequency [GHz] Small Signal Gain [dB]

X-Band Power Amplifier MMIC ES/EMM5068VU Preliminary ■■■■S-PARAMETER VDD=6V, IDD(DC)=1300mA FrequencyFrequencyFrequencyFrequency [GHz][GHz][GHz][GHz] MAG MAGMAGMAG ANG ANGANGANG MAG MAGMAGMAG ANG ANGANGANG MAG MAGMAGMAG ANG ANGANGANG MAG MAGMAGMAG ANG ANGANGANG S11S11S11S11 S21S21S21S21 S12S12S12S12S 2 2 S22S22S22

X-Band Power Amplifier MMIC ES/EMM5068VUPreliminary IDD(DC)=1300mA 34567 VDD[V] ∆∆∆∆ Tch[oC] ∆∆∆∆Tch vs. DRAIN VOLTAGE (Reference Data) Note : ∆∆∆∆Tch : Channel Temperature Rise from PCB surface MTTF vs. Tch 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+11 1.E+12 50 100 150 200 250 Tch [ oC] MTTF [hrs] Ea=1.56eV

X-Band Power Amplifier MMIC ES/EMM5068VU Preliminary ■■■■ Block diagram PIN ASSIGNMENT 1 : VGG 2 : RF in 3 : VGG 4 : VDD 5 : RF out 6 : VDD ■■■■ Recommended Bias Circuit 1 2 3 6 5 4 RF in RF out GND GND Note 1: The capacitors are recommended on the bias supply line, close to the package, in order to prevent video oscillations which could damage the module. Note 2: Two pins named VGG are internally connected. Note 3: Two pins named VDD are internally connected. 1000pF 1000pF 1000pF 1000pF 1uF 1uF 1uF 1uF VDD VDD VGG VGG

X-Band Power Amplifier MMIC ES/EMM5068VUPreliminary ■■■■ Package Outline

X-Band Power Amplifier MMIC ES/EMM5068VU Preliminary ■■■■ PCB Pads and Solder-resist Pattern Unit: mm [inches] PCB: Diclad-522 Under plating: Cu : Nickel (Ni) 1 ∼ 4 µm Top plating: Gold (Au) (Flash plating 0.1 µm or less) Resist Pattern

X-Band Power Amplifier MMIC ES/EMM5068VUPreliminary ■■■■TUNING PERFORMANCE Device performance at higher band (11.7 to 13.3GHz) can be improved by changing PCB line pattern. Output Power vs. Frequency IMD vs. Output Power VDD=6V, IDD(DC)=1300mA, with-Tuning 8 9 10 11 12 13 14 15 Frequency[GHz] Output Power[dBm] VDD=6V, IDD(DC)=1300mA, with-Tuning -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 17 19 21 23 25 27 29 31 2-Tone Total Output Power [dBm] Intermodulation Distortion [dBc] 9.5GHz 11.7GHz 13.3GHz Pin=-4dBm Pin=0dBm Pin=+4dBm Pin=+10dBm P1dB IM5 IM3 Tuning Stub PCB: RO4003 Er : 3.38 Thickness : 0.2mm

X-Band Power Amplifier MMIC ES/EMM5068VU Preliminary For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 © 2005 Eudyna Devices USA Inc. Printed in U.S.A.