P0511946H EUDYNA | Alldatasheet
Document overview
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- PDF pages: 5
Technical content
♦ Features
- 1.9 GHz frequency band
- Typical 39.0 dBm output power
- Low power consumption 43 W typ.
- Excellent adjacent leakage power
- Typical 30 dB power gain
- Cost-effective metal package
- Low thermal resistance structure
Applications
- Final stage power amplifier of base station for PHS ♦ Description The P0511946H is a high performance 1.9 GHz band power amplifier module capable of 39 dBm output power with a typical 30 dB gain at 1.9 GHz band, housed in a cost effective metal package. This device features a low power consumption owing to the excellent linear- ity and high gain of the pulse-doped GaAs MESFET developed by SEI, dissipating 3600 mA typical. It operates from +12 V and -5 V power supplies. P0511946H
1.9 GHz band
03.05.26 Preliminary
Power Amplifier Module P0511946H ♦ Absolute Maximum Ratings Case Temperature Tc=35 °C ♦ Electrical Specifications Case Temperature Tc=35°C Notes: Operating of this device above any one of these parameters may cause permanent damage. *1:Vg1,Vg2=-5.0 V *2:Burst Operation (Duty Ratio<=50%) Parameter Symbol Value Units DC Supply Voltage 13*1 V - 6 V Input Power Operating Case Temperature Topt -20 to + 85* 2 °C Storage Temperature Tstg -40 to + 90 °C Vd Vg Pin 15 dBm Parameter Symbol Test Conditions Frequency Supply Current (under operation) Power Gain Harmonic Distortion Gate Current Input VSWR ID f Ga 2f0 3f0 IG Value Min. Typ. Max. Units
1920 MHz
27.0 dB dBc 1880 30.0 -40 mA dBc-40 4000 1.8 2.5 Pout=39.0 dBm Vd1=12V Vd2=12 V Vd3=12V Vg1=-5.0 V Vg2=-5.0 V Adjacent Channel Leakage Power Ratio Occupied Frequency Bandwidth ACLR1 ACLR2 -68 dBc dBc 600 kHz offset 900 kHz offset -74 kHz270 3600
Power Amplifier Module P0511946H ♦ Power Characteristics ♦ Adjacent Channel Leakage Power Ratio 3000 3500 4000 4500 5000 5500 -15 -10 -5 0 5 10 15 Pin (dBm) Pout Ga Id f=1900MHz Vd1=Vd2=Vd3=12V Vg1=Vg2=-5V Pout (dBm), Ga (dB) ID (mA) -80 -75 -70 -65 -60 25 30 35 40 45 -600kHz +600kHz -900kHz +900kHz Pout (dBm) f=1900MHz Vd1=Vd2=Vd3=12V Vg1=Vg2=-5V π/4DQPSK 384kbps α =0.5 PN9 ACLR (dBc)
Power Amplifier Module P0511946H ♦ Package Drawings (Dimensions are mm) (1) RFin (2) GND (3) Vd1 (4) Vg1 (5) Vd2 (6) Vg2 (7) Vd3 (8) GND (9) RFout Case:GND Note: (1)Lead Size : 0.25x0.5 (2)Nominal Variation of Lead Pitch : ±0.3 (3)Nominal Variation of parts undescribed : ±0.3 43.0 48.0 53.0 2.7 18.7 20.4MAX 3.0. 10.50 14.0 53.0 2.0 6.2MAX 2.5 P0511946H lot no. Dimensions are mm (+/-0.3mm) Lead Size : 0.25x0.5
Power Amplifier Module P0511946H ♦ Evaluation Board Layout (Dimensions are mm) Electron Device Department KP004J 60 Vd1 Vd2 Vd3Vg1 Vg2 RFoutRFin Circuit Board 0.8mm Dielectric Thickness εr=4.0,18µm copper C2 C4 RFin RFout Vd1 Vd2 Vg1 Vg2 Vd3 DESIGNATION VALUE C2,C4 0.1 µF C1,C3,C5,C6 1.0µF Vd1 Vd2Vg1 Vd Vg2 RFoutRF in