NP50P04SDG-E1-AY BYCHIP | Alldatasheet
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VDS= -40V, ID= -13A RDS(ON) < 12mΩ @ VGS = -10V RDS(ON) < 14mΩ @ VGS = -4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -13 A Drain Current-Continuous(TC=100℃) ID (100℃) -9 A Pulsed Drain Current IDM 50 A Maximum Power Dissipation PD 2.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance ,Junction-to-Ambient(Note 2) RθJA 50 ℃/W www.bychip.cn SOP-8 Schematic diagrampin assignment NP50P04SDG-E1-AY v1.0
Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -40 - - V Zero Gate Voltage Drain Current IDSS VDS=-40V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.0 -3.0 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-12A - 12 m Ω Forward Transconductance gFS VDS=-15V,ID=-10A 35 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 2800 - PF Output Capacitance Coss - 320 - PF Reverse Transfer Capacitance Crss VDS=-20V,VGS=0V, F=1.0MHz - 220 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 11 - nS Turn-on Rise Time tr - 75 - nS Turn-Off Delay Time td(off) - 89 - nS Turn-Off Fall Time tf VDD=-20V, ,RL=2Ω VGS=-10V,RGEN=6Ω - 35 - nS Total Gate Charge Qg - 40 - nC Gate-Source Charge Qgs - 6 - nC Gate-Drain Charge Qgd VDS=-20V,ID=-12A, VGS=-10V - 12 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-12A - - 1.2 V Diode Forward Current (Note 2) IS - - -13 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.bychip.cn NP50P04SDG-E1-AY v2.0
1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.bychip.cn NP50P04SDG-E1-AY v3.0