MSP2303 MORESEMI | Alldatasheet

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Technical content

  • V DS = -30V,I D = -2.0A R DS(ON) < 130mΩ @ V GS =-10V R DS(ON) < 180mΩ @ V GS =-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package Application
  • PWM applications
  • Load switch
  • Power management D G S Schematic diagram Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSP2303 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D -2.0 A Drain Current-Pulsed (Note 1) I DM -10 A Maximum Power Dissipation P D 1.0 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 125 /W℃ -30V(D-S) P-Channel Enhancement Mode Power MOS FET MSP2303 Lead Free PIN Configuration MORE Semiconductor Company Limited http://www.moresemi.com 1/6

Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-10V, I D =-2.0A - 72 130 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-1.5A - 110 180 mΩ Forward Transconductance g FS V DS =-10V,I D =-2A 2 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 226 - PF Output Capacitance C oss - 47 - PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz - 28 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 9 - nS Turn-on Rise Time t r - 9 - nS Turn-Off Delay Time t d(off) - 18 - nS Turn-Off Fall Time t f V DD =-15V,R L =15Ω V GS =-10V,R GEN =6Ω - 6 - nS Total Gate Charge Q g - 8.5 - nC Gate-Source Charge Q gs - 2.3 - nC Gate-Drain Charge Q gd V DS =-15V,I D =-2.0A,V GS =-10V - 1.5 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-2.0A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D Zero Gate Voltage Drain Current I DSS V DS =-30V,V GS =0V - - -1 μA MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSP2303

  1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° MORE Semiconductor Company Limited http://www.moresemi.com 6/6 MSP2303