MSP3401L MORESEMI | Alldatasheet

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Technical content

  • V DS = -30V,I D = -4.2A R DS(ON) < 130mΩ @ V GS =-2.5V R DS(ON) < 75mΩ @ V GS =-4.5V R DS(ON) < 55mΩ @ V GS =-10V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • PWM applications
  • Load switch
  • Power management D G S Schematic diagram Marking and pin Assignment SOT-23-3L top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSP3401L SOT-23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±12 V Drain Current-Continuous I D -4.2 A Drain Current-Pulsed (Note 1) I DM -30 A Maximum Power Dissipation P D 1.2 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 104 /W℃ Lead Free PIN Configuration MORE Semiconductor Company Limited http://www.moresemi.com 1/6 -30V(D-S) P-Channel Enhancement Mode Power MOS FET Application General Features

Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-10V, I D =-4.2A - 47 55 mΩ V GS =-4.5V, I D =-4A - 56 75 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-1A 72 130 mΩ Forward Transconductance g FS V DS =-5V,I D =-4.2A - 10 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 880 - PF Output Capacitance C oss - 105 - PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz - 65 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 7 - nS Turn-on Rise Time t r - 3 - nS Turn-Off Delay Time t d(off) - 30 - nS Turn-Off Fall Time t f V DD =-15V,I D =-4.2A V GS =-10V,R GEN =6Ω - 12 - nS Total Gate Charge Q g - 8.5 - nC Gate-Source Charge Q gs - 1.8 - nC Gate-Drain Charge Q gd V DS =-15V,I D =-4.2A,V GS =-4.5V - 2.7 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-4.2A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -30 - V MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSP3401L

  1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. MORE Semiconductor Company Limited 6/6 MSP3401L