MSC8205G MORESEMI | Alldatasheet

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Technical content

  • V DS = 20V,I D = 6A R DS(ON) < 37mΩ @ V GS =2.5V R DS(ON) < 27mΩ @ V GS =4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package Application
  • Battery protection
  • Load switch
  • Power management Schematic diagram TSSOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSC8205G TSSOP-8 Ø330mm 12mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±10 V Drain Current-Continuous I D 6 A Drain Current-Pulsed (Note 1) I DM 25 A Maximum Power Dissipation P D 1.5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 83 /W℃ MORE Semiconductor Company Limited http://www.moresemi.com 1/6 MSC8205G 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET Marking and pin assignment Lead Free PIN Configuration

Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.5 0.7 1.2 V V GS =4.5V, I D =4.5A - 21 27 mΩ Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =3.5A - 27 37 mΩ Forward Transconductance g FS V DS =5V,I D =4.5A - 10 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 600 - PF Output Capacitance C oss - 330 - PF Reverse Transfer Capacitance C rss V DS =8V,V GS =0V, F=1.0MHz - 140 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 20 nS Turn-on Rise Time t r - 11 25 nS Turn-Off Delay Time t d(off) - 35 70 nS Turn-Off Fall Time t f V DD =10V,I D =1A V GS =4.5V,R GEN =6Ω - 30 60 nS Total Gate Charge Q g - 10 15 nC Gate-Source Charge Q gs - 2.3 - nC Gate-Drain Charge Q gd V DS =10V,I D =6A, V GS =4.5V - 1.5 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1.7A - 0.75 1.2 V Diode Forward Current (Note 2) I S - - 1.7 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 2/6 Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 21 - V Zero Gate Voltage Drain Current I DSS V DS =19.5V,V GS =0V - - 1 μA MSC8205G

D 2.900 3.100 E 4.300 4.500 b 0.190 0.300 c 0.090 0.200 E1 6.250 6.550 A 1.100 A2 0.800 1.000 A1 0.020 0.150 e 0.65(BSC) L 0.500 0.700 H 0.25(TYP) Θ 1° 7° MORE Semiconductor Company Limited http://www.moresemi.com 6/6 MSC8205G