MSC4606W MORESEMI | Alldatasheet

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Technical content

N and P-Channel Enhancement Mode Power MOS FET General Features

  • N-Channel V DS = 30V,I D =6.5A R DS(ON) < 30mΩ @ V GS =10V
  • P-Channel V DS = -30V,I D = -7A R DS(ON) < 33mΩ @ V GS =-10V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSC4606W SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V T A =25℃ 6.5 -7 Continuous Drain Current T A =70℃ I D 5.4 -5.8 A Pulsed Drain Current (Note 1) I DM 30 -30 A Maximum Power Dissipation T A =25℃ P D 2.0 2.0 W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 ℃ N-channel P-channel MSC4606W MSC4606W Lead Free PIN Configuration MORE Semiconductor Company Limited http://www.moresemi.com 1/9

A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 33 - V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1 1.6 3 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =6A - 20 30 mΩ Forward Transconductance g FS V DS =5V,I D =6A 15 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 255 - PF Output Capacitance C oss - 45 - PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz - 35 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 4.5 - nS Turn-on Rise Time t r - 2.5 - nS Turn-Off Delay Time t d(off) - 14.5 - nS Turn-Off Fall Time t f V DD =15V, R L =2.5Ω V GS =10V,R GEN =3Ω - 3.5 - nS Total Gate Charge Q g - 13 - nC Gate-Source Charge Q gs - 5.5 - nC Gate-Drain Charge Q gd V DS =15V,I D =6A, V GS =10V - 3.5 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =6A - 0.8 1.2 V Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) R θJA N-Ch 62.5 /W℃ Thermal Resistance,Junction-to-Ambient (Note2) R θJA P-Ch 62.5 /W℃ MORE Semiconductor Company Limited http://www.moresemi.com 2/9 MSC4606W

A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D Zero Gate Voltage Drain Current I DSS V DS =-30V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D Drain-Source On-State Resistance R DS(ON) V GS =-10V, I D =-6.5A - 28 33 mΩ Forward Transconductance g FS V DS =-5V,I D =-6.5A 10 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 520 - PF Output Capacitance C oss - 100 - PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz - 65 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 7.5 - nS Turn-on Rise Time t r - 5.5 - nS Turn-Off Delay Time t d(off) - 19 - nS Turn-Off Fall Time t f V DD =-15V, R L =2.3Ω V GS =-10V,R GEN =6Ω - 7 - nS Total Gate Charge Q g - 9.2 - nC Gate-Source Charge Q gs - 1.6 - nC Gate-Drain Charge Q gd V DS =-15V,I D =-6.5A V GS =-10V - 2.2 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-6.5A - - -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 3/9 MSC4606W

Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Im p edance MORE Semiconductor Company Limited http://www.moresemi.com 6/9 MSC4606W

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° MORE Semiconductor Company Limited http://www.moresemi.com 9/9 MSC4606W