MSC0203S-SOT23 MORESEMI | Alldatasheet

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Technical content

N and P-Channel Enhancement Mode Power MOS FET General Features

  • N-Channel R DS(ON) < 65mΩ @ V GS =4.5V R DS(ON) < 90mΩ @ V GS =2.5V
  • P-Channel V DS = -20V,I D = -3A R DS(ON) < 110mΩ @ V GS =-4.5V R DS(ON) < 140mΩ @ V GS =-2.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package pin Assignment SOT-23-6L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSC0203S SOT-23-6L Ø180mm 8mm 3000 units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 20 -20 V Gate-Source Voltage V GS ±12 ±12 V T A =25℃ 3 -3 Continuous Drain Current T A =70℃ I D 2.4 -2.4 A Pulsed Drain Current (Note 1) I DM 13 -13 A Maximum Power Dissipation T A =25℃ P D 0.8 0.8 W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) R θJA N-Ch 156 /W℃ Thermal Resistance,Junction-to-Ambient (Note2) R θJA P-Ch 156 /W℃ N-channel P-channel PIN Configuration Lead Free MORE Semiconductor Company Limited http://www.moresemi.com 1/10 MSC0203S V DS = 20V,I D = 3A

A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 22 - V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.5 0.75 1.2 V V GS =2.5V, I D =2.8A - 35 90 mΩ Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =3A - 29 65 mΩ Forward Transconductance g FS V DS =5V,I D =3A - 8 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 260 - PF Output Capacitance C oss - 48 - PF Reverse Transfer Capacitance C rss V DS =10V,V GS =0V, F=1.0MHz - 27 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 2.5 - nS Turn-on Rise Time t r - 3.2 - nS Turn-Off Delay Time t d(off) - 21 - nS Turn-Off Fall Time t f V DD =10V, R L =3.3Ω V GS =4.5V,R GEN =6Ω - 3 - nS Total Gate Charge Q g - 2.9 5 nC Gate-Source Charge Q gs - 0.4 - nC Gate-Drain Charge Q gd V DS =10V,I D =3A, V GS =4.5V - 0.6 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =3 A - - 1.2 V Diode Forward Current (Note 2) I S - - 3 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 2/10 MSC0203S

Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -20 - V Zero Gate Voltage Drain Current I DSS V DS =-20V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-4.5V, I D =-2.5 A - 78 110 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-2A - 102 140 mΩ Forward Transconductance g FS V DS =-5V,I D =-2.5A - 9.5 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 325 - PF Output Capacitance C oss - 63 - PF Reverse Transfer Capacitance C rss V DS =-10V,V GS =0V, F=1.0MHz - 37 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 11 - nS Turn-on Rise Time t r - 5.5 - nS Turn-Off Delay Time t d(off) - 22 - nS Turn-Off Fall Time t f V DD =-10V, R L =5Ω V GS =-4.5V,R GEN =3Ω - 8 - nS Total Gate Charge Q g - 3.2 - nC Gate-Source Charge Q gs - 0.6 - nC Gate-Drain Charge Q gd V DS =-10V,I D =-2A, V GS =-4.5V - 0.9 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-3A - - -1.2 V Diode Forward Current (Note 2) I S - - -3 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 3/10 MSC0203S

MORE Semiconductor Company Limited http://www.moresemi.com 10/10 MSC0203S