MSP1013D MORESEMI | Alldatasheet

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Technical content

  • V DS =-100V,I D =-13A R DS(ON) <200mΩ @ V GS =-10V (Typ:170m Ω)
  • Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged
  • High density celldesign for ultra low on-resistance Application
  • Power switch
  • DC/DC converters Schematic diagram Marking and pin assignment TO-252 -2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSP1013D TO-252-2L - - - Absolute Maximum Ratings (T C =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -100 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D -13 A Drain Current-Continuous(T C =100℃) I D (100℃) -9.2 A Pulsed Drain Current I DM -30 A Maximum Power Dissipation P D 40 W Derating factor

0.32 W/℃

Single pulse avalanche energy (Note 5) E AS 110 mJ Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ MSP1013D -100V(D-S) P-Channel Enhancement Mode Power MOS FET

  • ESD protested Lead Free PIN Configuration MORE Semiconductor Company Limited http://www.moresemi.com 1/6 MSP1013D

Thermal Resistance,Junction-to-Case (Note 2) R θJc 3.13 /W℃ Electrical Characteristics (T C =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -100 - - V Zero Gate Voltage Drain Current I DSS V DS =-100V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±10 μA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D Drain-Source On-State Resistance R DS(ON) V GS =-10V, I D =-16A - 170 200 mΩ Forward Transconductance g FS V DS =-15V,I D =-5A 12 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 760 - PF Output Capacitance C oss - 260 - PF Reverse Transfer Capacitance C rss V DS =-25V,V GS =0V, F=1.0MHz - 170 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 14 - nS Turn-on Rise Time t r - 18 - nS Turn-Off Delay Time t d(off) - 50 - nS Turn-Off Fall Time t f V DD =-50V,I D =-10A V GS =-10V,R GEN =9.1Ω - 18 - nS Total Gate Charge Q g - 25 - nC Gate-Source Charge Q gs - 5 - nC Gate-Drain Charge Q gd V DS =-50V,I D =-10A, V GS =-10V - 7 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-10A - - -1.2 V Diode Forward Current (Note 2) I S - - - -13 A Reverse Recovery Time t rr - 35 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =-10A di/dt = 100A/μs (Note3) - 46 - nC Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. E AS condition：Tj=25℃,V DD =-50V,V G =-10V,L=0.5mH,Rg=25Ω MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSP1013D

1) E AS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSP1013D

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 2.900 TYP. 0.114 TYP. L2 1.400 1.700 0.055 0.067 L3 1.600 TYP. 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. 0.211 TYP. MORE Semiconductor Company Limited http://www.moresemi.com 6/6 MSP1013D