MSP0604L MORESEMI | Alldatasheet

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Technical content

  • V DS =-60V,I D =-4A R DS(ON) <120mΩ @ V GS =-10V R DS(ON) <170mΩ @ V GS =-4.5V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation Application
  • Load switch
  • PWM application Schematic diagram Marking and pin Assignment SOT-23-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSP0604L SOT-23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T C =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D -4 A Pulsed Drain Current I DM -12 A Maximum Power Dissipation P D 1.5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) R θJA 83.3 /W℃ MSP0604L -60V(D-S) P-Channel Enhancement Mode Power MOS FET MORE Semiconductor Company Limited http://www.moresemi.com 1/6 Lead Free PIN Configuration

Electrical Characteristics (T C =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -60 - - V Zero Gate Voltage Drain Current I DSS V DS =-60V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-10V, I D =-4A - 106 120 m Ω Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-3A - 135 170 m Ω Forward Transconductance g FS V DS =-5V,I D =-4A - 10 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 930 - PF Output Capacitance C oss - 85 - PF Reverse Transfer Capacitance C rss V DS =-30V,V GS =0V, F=1.0MHz - 35 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 8 - nS Turn-on Rise Time t r - 4 - nS Turn-Off Delay Time t d(off) - 32 - nS Turn-Off Fall Time t f V DD =-30V, R L =7.5Ω， V GS =-10V,R G =3Ω - 7 - nS Total Gate Charge Q g - 25 - nC Gate-Source Charge Q gs - 3 - nC Gate-Drain Charge Q gd V DS =-30,I D =-4A, V GS =-10V - 7 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-4A - -1.2 V Diode Forward Current (Note 2) I S - - -4 A Reverse Recovery Time t rr - 25 nS Reverse Recovery Charge Qrr T J = 25°C, I F =- 4A di/dt = -100A/μs (Note3) - 31 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production MSP0604L MORE Semiconductor Company Limited http://www.moresemi.com 2/6

1）E AS test Circuit 2）Gate charge test Circuit 3）Switch Time Test Circuit MSP0604L MORE Semiconductor Company Limited http://www.moresemi.com 3/6

  1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. MSP0604L MORE Semiconductor Company Limited http://www.moresemi.com 6/6