MSP0515D MORESEMI | Alldatasheet

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Technical content

  • V DS =-55V,I D =-15A R DS(ON) <80mΩ @ V GS =-10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation Application
  • Power switching application
  • Hard switched and high frequency circuits
  • DC-DC Converter Schematic diagram Marking and pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSP0515D TO-252-2L - - - Absolute Maximum Ratings (T C =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -55 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D -15 A Drain Current-Continuous(T C =100℃) I D (100℃) -10 A Pulsed Drain Current I DM -50 A Maximum Power Dissipation P D 50 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ MSP0515D -55V(D-S) P-Channel Enhancement Mode Power MOS FET Lead Free PIN Configuration MORE Semiconductor Company Limited http://www.moresemi.com 1/6

Electrical Characteristics (T C =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -55 - - V Zero Gate Voltage Drain Current I DSS V DS =-55V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D Drain-Source On-State Resistance R DS(ON) V GS =-10V, I D =-5A - 64 80 mΩ Forward Transconductance g FS V DS =-15V,I D =-5A 16 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1450 - PF Output Capacitance C oss - 145 - PF Reverse Transfer Capacitance C rss V DS =-20V,V GS =0V, F=1.0MHz - 110 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 8 - nS Turn-on Rise Time t r - 9 - nS Turn-Off Delay Time t d(off) - 65 - nS Turn-Off Fall Time t f V DD =-30V, ,R L =30Ω V GS =-10V,R GEN =6Ω - 30 - nS Total Gate Charge Q g - 26 - nC Gate-Source Charge Q gs - 4.5 - nC Gate-Drain Charge Q gd V DS =-30V,I D =-5A, V GS =-10V - 7 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-3A - - 1.2 V Diode Forward Current (Note 2) I S - - -15 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Thermal Characteristic Thermal Resistance ,Junction-to-Case (Note 2) R θJC 2.5 /W℃ MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSP0515D

1) E AS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSP0515D

MORE Semiconductor Company Limited http://www.moresemi.com 6/6 MSP0515D