MSN6010F MORESEMI | Alldatasheet

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Technical content

  • V DS =600V,I D =10A R DS(ON) <0.95Ω @ V GS =10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high E AS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability Application
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity TO-220F-3L - - - Absolute Maximum Ratings (T C =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ±30 V Drain Current-Continuous I D 10 A Drain Current-Continuous(T C =100℃) I D (100℃) 6 A Pulsed Drain Current I DM 40 A Maximum Power Dissipation P D W Derating factor

0.4 W/℃

Single pulse avalanche energy (Note 5) E AS 700 mJ Operating Junction and Storage Temperature Range T J STG -55 To 155 ℃ MORE Semiconductor Company Limited http://www.moresemi.com 1/5 MSN6010F 600V(D-S) N-Channel Enhancement Mode Power MOS FET MSN6010F MSN6010F Lead Free PIN Configuration Schematic diagram Marking and pin assignment TO-220F top view

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. E AS condition: j=25℃,V DD =50V,V G =10V,L=0.5mH,Rg=25Ω MORE Semiconductor Company Limited http://www.moresemi.com 2/5 MSN6010F Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) R θJC 2.5 /W℃ Electrical Characteristics (T C =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 600 - V Zero Gate Voltage Drain Current I DSS V DS =600V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±30V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 3 4.5 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =5.0A - 0.95 Ω Forward Transconductance g FS V DS =40V,I D =3.5A 8.2 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1610 - PF Output Capacitance C oss - 156 - PF Reverse Transfer Capacitance C rss V DS =25V,V GS =0V, F=1.0MHz - 20 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 65 - nS Turn-on Rise Time t r - 105 - nS Turn-Off Delay Time t d(off) - 210 - nS Turn-Off Fall Time t f V DD =300V,I D =10A,R L =25Ω V GS =10V,R G =2.5Ω - 85 - nS Total Gate Charge Q g - 34 nC Gate-Source Charge Q gs - 6.5 nC Gate-Drain Charge Q gd V DS =480V,I D =10A, V GS =10V - 12 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =10A - 1.4 V Diode Forward Current (Note 2) I S - - 10.0 A Reverse Recovery Time t rr - 425 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 10.0A di/dt = 100A/μs (Note3) - 4.31 Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) C μ - -

MORE Semiconductor Company Limited http://www.moresemi.com 5/5 MSN6010F