MSN3400 MORESEMI | Alldatasheet

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Technical content

  • V DS = 30V,I D = 5.8A R DS(ON) < 59mΩ @ V GS =2.5V R DS(ON) < 45mΩ @ V GS =4.5V R DS(ON) < 41mΩ @ V GS =10V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • PWM applications
  • Load switch
  • Power management D G S Schematic diagram Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSN3400 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±12 V Drain Current-Continuous I D 5.8 A Drain Current-Pulsed (Note 1) I DM 30 A Maximum Power Dissipation P D 1.4 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 89 /W℃ 30V(D-S) N-Channel Enhancement Mode Power MOS FET Application Lead Free PIN Configuration MORE Semiconductor Company Limited http://www.moresemi.com 1/6

Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.7 0.9 1.4 V V GS =2.5V, I D =4A - 45 59 mΩ V GS =4.5V, I D =5A - 31 45 mΩ Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =5.8A - 28 41 mΩ Forward Transconductance g FS V DS =5V,I D =5A 10 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 820 - PF Output Capacitance C oss - 99 - PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz - 77 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 3.3 - nS Turn-on Rise Time t r - 4.8 - nS Turn-Off Delay Time t d(off) - 26 - nS Turn-Off Fall Time t f V DD =15V, R L =2.7Ω V GS =10V,R GEN =3Ω - 4 - nS Total Gate Charge Q g - 9.5 - nC Gate-Source Charge Q gs - 1.5 - nC Gate-Drain Charge Q gd V DS =15V,I D =5.8A, V GS =4.5V - 3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =5.8A - - 1.2 V Diode Forward Current (Note 2) I S - - 5.8 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 33 - V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V - - 1 μA MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSN3400

  1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° MORE Semiconductor Company Limited http://www.moresemi.com 6/6 MSN3400