MSN1505W MORESEMI | Alldatasheet

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Technical content

  • V DS =150V,I D =5.2A R DS(ON) < 44mΩ @ V GS =10V （Typ：31mΩ）
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Low gate to drain charge to reduce switching losses Application
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSN1505W SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 150 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 5.2 A Drain Current-Continuous(T C =100 )℃ I D (100℃) 3.7 A Pulsed Drain Current(Note 1) I DM 42 A Maximum Power Dissipation P D 3.5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) R θJC 35.7 /W℃ 150V(D-S) N-Channel Enhancement Mode Power MOS FET Lead Free PIN Configuration MORE Semiconductor Company Limited http://www.moresemi.com 1/6

Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 150 170 - V Zero Gate Voltage Drain Current I DSS V DS =150V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 2.5 3.2 4.5 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =5.2A - 31 44 mΩ Forward Transconductance g FS V DS =50V,I D =5.2A 12 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1700 - PF Output Capacitance C oss - 190 - PF Reverse Transfer Capacitance C rss V DS =25V,V GS =0V, F=1.0MHz - 90 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 15 - nS Turn-on Rise Time t r - 13 - nS Turn-Off Delay Time t d(off) - 26 - nS Turn-Off Fall Time t f V DD =75V,I D =3.1A V GS =10V,R GEN =6.5Ω - 14 - nS Total Gate Charge Q g - 35.8 - nC Gate-Source Charge Q gs - 7.5 - nC Gate-Drain Charge Q gd V DS =75V,I D =3.1A, V GS =10V - 13 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =3.1A - - 1.2 V Diode Forward Current (Note 2) I S - - 2.7 A Reverse Recovery Time trr - 50 - nS Reverse Recovery Charge Qrr T J = 25°C, I F = 3.1A, di/dt = 100A/μs - 140 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production. MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSN1505W

1) E AS test Circuits 2) Gate charge test Circuit 3) Switch Time Test Circuit MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSN1505W

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° MORE Semiconductor Company Limited http://www.moresemi.com 6/6 MSN1505W