MSN1002 MORESEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

  • V DS = 100V,I D = 2A R DS(ON) <240mΩ @ V GS =10V (Typ:200mΩ)
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation Application
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply Absolute Maximum Ratings (T A =25℃℃ ℃℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 2 A Drain Current-Pulsed (Note 1) I DM 5 A Maximum Power Dissipation P D 1.25 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 100 /W℃ MSN1002 100V(D-S) N-Channel Enhancement Mode Power MOS FET MSN1002 Lead Free PIN Configuration MORE Semiconductor Company Limited http://www.moresemi.com 1/6 Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity SOT-23 Ø180mm 8 mm 3000 units D G S Schematic diagram Marking and pin Assignment SOT-23 top view

Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250µA 1.2 1.8 2.5 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =1A - 200 240 m Ω Forward Transconductance g FS V DS =5V,I D =1A 1 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 190 - PF Output Capacitance C oss - 22 - PF Reverse Transfer Capacitance C rss V DS =50V,V GS =0V, F=1.0MHz - 13 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 6 - nS Turn-on Rise Time t r - 10 - nS Turn-Off Delay Time t d(off) - 10 - nS Turn-Off Fall Time t f V DD =50V,I D =1.3A,R L =39Ω V GS =10V,R G =1Ω - 6 - nS Total Gate Charge Q g - 5.2 nC Gate-Source Charge Q gs - 0.75 - nC Gate-Drain Charge Q gd V DS =50V,I D =1.3A, V GS =10V - 1.4 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1.3A - - 1.2 V Diode Forward Current (Note 2) I S - - 2 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250µA 100 110 - V Zero Gate Voltage Drain Current I DSS V DS =100V,V GS =0V - - 1 µA MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSN1002

1）） ））E AS test circuit 2）） ））Gate charge test circuit 3）） ））Switch Time Test Circuit MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSN1002

MORE Semiconductor Company Limited http://www.moresemi.com 6/6 MSN1002 Dimensions in Millimeters (UNIT:mm) Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.