MSN0620D MORESEMI | Alldatasheet

Document overview

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Technical content

  • V DS =60V,I D =20A R DS(ON) <45mΩ @ V GS =10V
  • High density cell design for ultra low Rdson
  • Fully characterized Avalanche voltage and current
  • Good stability and uniformity with high E AS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability Application
  • Power switching application
  • Hard Switched and High Frequency Circuits
  • Uninterruptible Power Supply Schematic diagram Marking and pin Assignment TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSN0620D MSN0620D TO-252-2L - - 2500PCS Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 20 A Drain Current-Continuous(T C =100℃) I D (100℃) 14 A Pulsed Drain Current I DM 60 A Maximum Power Dissipation P D 40 W Derating factor

0.27 W/℃

Single pulse avalanche energy (Note 5) E AS 72 mJ Operating Junction and Storage Temperature Range T J STG -55 To 175 ℃ PIN Configuration Lead Free MORE Semiconductor Company Limited http://www.moresemi.com 1/6 60V(D-S) N-Channel Enhancement Mode Power MOS FET

Thermal Resistance,Junction-to-Case(Note 2) R θJC 3.7 /W℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 60 - - V Zero Gate Voltage Drain Current I DSS V DS =60V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1.0 - 3.0 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =20A - 37 45 mΩ Forward Transconductance g FS V DS =5V,I D =4.5A 11 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 500 - PF Output Capacitance C oss - 60 - PF Reverse Transfer Capacitance C rss V DS =30V,V GS =0V, F=1.0MHz - 25 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 5 - nS Turn-on Rise Time t r - 2.6 - nS Turn-Off Delay Time t d(off) - 16.1 - nS Turn-Off Fall Time t f V DD =30V,I D =2A,R L =6.7Ω V GS =10V,R G =3Ω - 2.3 - nS Total Gate Charge Q g - 12 nC Gate-Source Charge Q gs - 4.1 nC Gate-Drain Charge Q gd V DS =48V,I D =15A, V GS =10V - 4.5 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =20A - 1.2 V Diode Forward Current (Note 2) I S - - 20 A Reverse Recovery Time t rr - 35 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =20A di/dt = 100A/μs(Note3) - 53 - nC Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,V DD =30V,V G =10V,L=0.5mH,Rg=25Ω MORE Semiconductor Company Limited http://www.moresemi.com 2/6 Thermal Characteristic MSN0620D

1）E AS test Circuits 2）Gate charge test Circuit: 3）Switch Time Test Circuit： MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSN0620D

MORE Semiconductor Company Limited http://www.moresemi.com 6/6 MSN0620D