MSN05B2K MORESEMI | Alldatasheet

Document overview

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Technical content

  • V DS =55V,I D =120A R DS(ON) < 5.5mΩ @ V GS =10V (Typ:4.1m Ω)
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high E AS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability Application
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity TO-220-3L - - - Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 55 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 120 A Drain Current-Continuous(T C =100℃) I D (100℃) 85 A Pulsed Drain Current I DM 420 A Maximum Power Dissipation P D 200 W Derating factor

1.33 W/℃

55V(D-S) N-Channel Enhancement Mode Power MOS FET Schematic diagram Marking and pin assignment TO-220-3L top view PIN Configuration Lead Free Single pulse avalanche energy (Note 5) E AS 1100 mJ Operating Junction and Storage Temperature Range T J STG -55 To 175 ℃ MSN05B2K MSN05B2K MORE Semiconductor Company Limited http://www.moresemi.com 1/6

Thermal Resistance,Junction-to-Case (Note 2) R θJC 0.75 /W℃ Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 55 65 - V Zero Gate Voltage Drain Current I DSS V DS =55V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 2 3 4 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =40A - 4.1 5.5 mΩ Forward Transconductance g FS V DS =25V,I D =40A 50 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 4900 - PF Output Capacitance C oss - 470 - PF Reverse Transfer Capacitance C rss V DS =25V,V GS =0V, F=1.0MHz - 460 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 20 - nS Turn-on Rise Time t r - 19 - nS Turn-Off Delay Time t d(off) - 70 - nS Turn-Off Fall Time t f V DD =30V,I D =2A V GS =10V,R GEN =2.5Ω - 30 - nS Total Gate Charge Q g - 125 - nC Gate-Source Charge Q gs - 24 - nC Gate-Drain Charge Q gd V DS =30V,I D =30A, V GS =10V - 49 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =40A - - 1.2 V Diode Forward Current (Note 2) I S - - 120 A Reverse Recovery Time t rr - 37 - nS Reverse Recovery Charge Qrr Tj=25℃,I F =75A,di/dt=100A/μs (Note3) - 58 - nC Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,V DD =28V,V G =10V,L=0.5mH,Rg=25Ω MSN05B2K MORE Semiconductor Company Limited http://www.moresemi.com 2/6

1）E AS test Circuits 2）Gate charge test Circuit: 3）Switch Time Test Circuit： MSN05B2K MORE Semiconductor Company Limited http://www.moresemi.com 3/6

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 4.400 4.600 0.173 0.181 A1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 D 9.910 10.250 0.390 0.404 E 8.9500 9.750 0.352 0.384 E1 12.650 12.950 0.498 0.510 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 F 2.650 2.950 0.104 0.116 H 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 L 12.900 13.400 0.508 0.528 L1 2.850 3.250 0.112 0.128 V 7.500 REF. 0.295 REF. Φ 3.400 3.800 0.134 0.150 MSN05B2K MORE Semiconductor Company Limited http://www.moresemi.com 6/6