MSC0605W MORESEMI | Alldatasheet

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Technical content

  • V DS =60V,I D =4.5A R DS(ON) < 45mΩ @ V GS =10V （Typ：38mΩ）
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Low gate to drain charge to reduce switching losses Application
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSC0605W SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D 4.5 A Drain Current-Continuous(T C =100℃) I D (100℃) 3.0 A Pulsed Drain Current I DM 20 A Maximum Power Dissipation P D 2 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 62.5 /W℃ MSC0605W MSC0605W 60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET Lead Free PIN Configuration MORE Semiconductor Company Limited http://www.moresemi.com 1/6

Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 60 69 - V Zero Gate Voltage Drain Current I DSS V DS =60V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1.2 2.0 2.5 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =4.5A 38 45 Forward Transconductance g FS V DS =5V,I D =4.5A 11 - - S Dynamic Characteristics (Note4) Input Capacitance C lss 450 PF Output Capacitance C oss 60 PF Reverse Transfer Capacitance C rss V DS =25V,V GS =0V, F=1.0MHz 25 PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 4.7 - nS Turn-on Rise Time t r - 2.3 - nS Turn-Off Delay Time t d(off) - 15.7 - nS Turn-Off Fall Time t f V Ds =30V,I D =4.5A V GS =10V,R GEN =3Ω - 1.9 - nS Total Gate Charge Q g - 8.5 - nC Gate-Source Charge Q gs - 1.6 - nC Gate-Drain Charge Q gd V DS =30V,I D =4.5A, V GS =10V - 2.2 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =4.5A - - 1.2 V Diode Forward Current (Note 2) I S - - 4.5 A Reverse Recovery Time t rr - 25 - nS Reverse Recovery Charge Qrr TJ = 25°C, I F =4.5A di/dt = 100A/μs (Note3) - 35 - nC Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSC0605W

1) E AS test Circuits 2) Gate charge test Circuit 3) Switch Time Test Circuit MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSC0605W

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° MORE Semiconductor Company Limited http://www.moresemi.com 6/6 MSC0605W