MSC0311WE MORESEMI | Alldatasheet

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Technical content

  • V DS = 30V,I D =11A R DS(ON) < 10mΩ @ V GS =10V R DS(ON) < 14mΩ @ V GS =4.5V ESD Rating: 2000V HBM
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package Application
  • PWM application
  • Load switch Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSC0311WE SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±10 V Drain Current-Continuous I D 11 A Drain Current-Pulsed (Note 1) I DM 50 A Maximum Power Dissipation P D 2.5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 50 /W℃ MSC0311WE 30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET MSC0311WE Lead Free PIN Configuration MORE Semiconductor Company Limited http://www.moresemi.com 1/6

Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 - V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V - - 1 μA Parameter Symbol Condition Min Typ Max Unit Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V - - ±10 μA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1.0 1.5 2.0 V V GS =10V, I D =8A - 7 10 mΩ Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =6A - 10 14 mΩ Forward Transconductance g FS V DS =10V,I D =11A 25 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1155 - PF Output Capacitance C oss - 260 - PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz - 95 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 nS Turn-on Rise Time t r - 16 nS Turn-Off Delay Time t d(off) - 40 nS Turn-Off Fall Time t f V DD =15V,R L =2.2Ω V GS =5V,R GEN =3Ω - 10.8 nS Total Gate Charge Q g - 17.5 nC Gate-Source Charge Q gs - 4.5 - nC Gate-Drain Charge Q gd V DS =15V,I D =8A, V GS =4.5V - 2.5 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1A - - 1.2 V Diode Forward Current (Note 2) I S - - 11 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSC0311WE

Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0Š 8Š 0Š 8Š MORE Semiconductor Company Limited http://www.moresemi.com 6/6 MSC0311WE