MSC0211GE MORESEMI | Alldatasheet

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Technical content

  • V DS = 20V,I D =11A R DS(ON) < 7mΩ @ V GS =2.5V R DS(ON) < 9mΩ @ V GS =4.5V ESD Rating: 2000V HBM
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package Application
  • PWM application
  • Load switch Schematic diagram Marking and pin assignment TSSOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSC0211GE TSSOP-8 Ø330mm 12mm 3000 units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±10 V Drain Current-Continuous I D 11 A Drain Current-Pulsed (Note 1) I DM 44 A Maximum Power Dissipation P D 1.6 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 78 /W℃ MSC0211GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
  • ESD protected MSC0211GE Lead Free PIN Configuration MORE Semiconductor Company Limited http://www.moresemi.com 1/6

Parameter Symbol Condition Min Typ Max Unit Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V - - ±10 μA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.6 0.8 1.2 V V GS =4.5V, I D =10A - 5.5 7 mΩ Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =5.5A - 7 9 mΩ Forward Transconductance g FS V DS =5V,I D =11A 25 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1710 - PF Output Capacitance C oss - 232 - PF Reverse Transfer Capacitance C rss V DS =10V,V GS =0V, F=1.0MHz - 200 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 2.5 nS Turn-on Rise Time t r - 7.2 nS Turn-Off Delay Time t d(off) - 49 nS Turn-Off Fall Time t f V DD =10V,R L =1Ω V GS =10V,R GEN =3Ω - 10.8 nS Total Gate Charge Q g - 17.5 nC Gate-Source Charge Q gs - 1.5 - nC Gate-Drain Charge Q gd V DS =10V,I D =10A, V GS =4.5V - 4.5 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1A - - 1.2 V Diode Forward Current (Note 2) I S - - 11 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 - V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V - - 1 μA MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSC0211GE

D 2.900 3.100 E 4.300 4.500 b 0.190 0.300 c 0.090 0.200 E1 6.250 6.550 A 1.100 A2 0.800 1.000 A1 0.020 0.150 e 0.65(BSC) L 0.500 0.700 H 0.25(TYP) Θ 1° 7° MORE Semiconductor Company Limited http://www.moresemi.com 6/6 MSC0211GE