MMBD914 SXSEMI | Alldatasheet
Document overview
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Technical content
Maximum Ratings@Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak ReverseVoltage VRM 100 V Peak Repetitive Peak ReverseVoltage VRRM Working Peak ReverseVoltage VRWM 100 V DC Blocking Voltage VR Average RectifiedOutputCurrent IO 300 mA Non-Repetitive Peak ForwardSurgeCurrent @t〓8.3ms IFSM 2 A PowerDissipation PD 350 mW Thermal ResistanceJunctiontoAmbient RθJA 357 ℃/W OperationJunction and StorageTemperature Range Tj ,TSTG -55~+150 ℃ ElectricalCharacteristics@Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions Reverse BreakdownVoltage V (BR) 100 V IR=100μA ForwardVoltage VF1 715 mV IF=1mA VF2 855 mV IF=10mA VF3 1000 mV IF=50mA VF4 1250 mV IF=150mA ReverseCurrent IR1 1 uA VR=75V IR2 25 nA VR=20V DiodeCapacitance CD 2 pF VR=0,f=1MHz Reverse RecoveryTime trr 4 ns IF =IR=10mA, Irr=0.1*IR
FEATURES
MARKING:5D SWITCHING DIODE MMBD914 1 www.sxsemi.com
2 www.sxsemi.com 0 25 50 75 100 125 150 100 200 300 400 0.1 100 0 204 06 08 0 100 1000 0 5 10 15 20 1.0 1.1 1.2 1.3 1.4 Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE Ta ( ) 300 0.3 Ta=100 Ta=25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) 300 Ta=100 Ta=25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) Forward Characteristics Reverse Characteristics Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF)
SOT-23 package OutIine Dimensions Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950TYP 0.037TYP e1 1.800 2.000 0.071 0.079 L 0.550REF 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23Suggested Pad Layout SWITCHING DIODE MMBD914 3 www.sxsemi.com