MKSMF52N20T KERSEMI | Alldatasheet

Document overview

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Technical content

Features

DS(on) = 0.041Ω ( Typ.)@ V GS = 10V, I D = 26A

  • Low gate charge ( Typ. 49nC)
  • Low C rss ( Typ. 66pF)
  • Fast switching
  • 100% avalanche tested
  • Improve dv/dt capability
  • RoHS compliant

Description

These N-Channel enhancement mode power field effect transis- tors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- cient switching mode power supplies and active power factor correction. TO-220 D G S TO-220F MOSFET Maximum Ratings T C = 25 o C unless otherwise noted Thermal Characteristics Symbol Parameter KSM52N20 KSMF52N20T Units V DSS Drain to Source Voltage 200 V V GSS Gate to Source Voltage ±30 V I D D r a i n C u r r e n t -Continuous (T C = 25 o C) 52 52* A-Continuous (T C = 100 o C) 33 33* I DM D r a i n C u r r e n t - P u l s e d (Note 1) 208 208* A E AS Single Pulsed Avalanche Energy (Note 2) 2520 mJ I AR Avalanche Current (Note 1) 52 A E AR Repetitive Avalanche Energy (Note 1) 35.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 o C) 357 38.5 W - Derate above 25 o C 2.86 0.3 W/ o C T J , T STG Operating and Storage Temperature Range -55 to +150 o C T L Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 o C Symbol Parameter KSM52N20 KSMF52N20T Units R θJC Thermal Resistance, Junction to Case 0.35 3.3 o C/WR θCS Thermal Resistance, Case to Sink Typ. 0.5 - R θJA Thermal Resistance, Junction to Ambient 62.5 62.5 *Drain current limited by maximum junction temperature 2014-7-2 1 www.kersemi.com

T C = 25 o C unless otherwise noted

Electrical Characteristics

Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity KSM52N20 KSM52N20 TO-220 - - 50 KSMF52N20T KSMF52N20T TO-220F - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain to Source Breakdown Voltage I D = 250µA, V GS = 0V, T J = 25 o C 200 - - V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient I D = 250µA, Referenced to 25 o C- 0 . 2 - V / o C I DSS Zero Gate Voltage Drain Current V DS = 200V, V GS = 0V - - 1 µAV DS = 160V, T C = 125 o C- - 1 0 I GSS Gate to Body Leakage Current V GS = ±30V, V DS = 0V - - ±100 nA V GS(th) Gate Threshold Voltage V GS = V DS , I D = 250µA3 . 0 - 5 . 0 V R DS(on) Static Drain to Source On Resistance V GS = 10V, I D = 26A - 0.041 0.049 Ω g FS Forward Transconductance V DS = 40V, I D = 26A (Note 4) -3 5- S C iss Input Capacitance V DS = 25V, V GS = 0V f = 1MHz - 2230 2900 pF C oss Output Capacitance - 540 700 pF C rss Reverse Transfer Capacitance - 66 100 pF Q g(tot) Total Gate Charge at 10V V DS = 160V, I D = 52A V GS = 10V (Note 4, 5) -4 9 6 3 n C Q gs Gate to Source Gate Charge - 19 - nC Q gd Gate to Drain “Miller” Charge - 24 - nC t d(on) Turn-On Delay Time V DD = 100V, I D = 20A R G = 25Ω (Note 4, 5) - 53 115 ns t r Turn-On Rise Time - 175 359 ns t d(off) Turn-Off Delay Time - 48 107 ns t f Turn-Off Fall Time - 29 68 ns I S Maximum Continuous Drain to Source Diode Forward Current - - 52 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 204 A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 52A - - 1.5 V t rr Reverse Recovery Time V GS = 0V, I SD = 52A dI F /dt = 100A/µs (Note 4) - 162 - ns Q rr Reverse Recovery Charge - 1.3 - µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.4mH, I AS = 52A, V DD = 50V, R G = 25Ω, Starting T J = 25°C 3. I SD ≤ 52A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2014-7-2 2 www.kersemi.com Package Marking and Ordering Information KSM52N20 / KSMF52N20T

Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms o KSM52N20 / KSMF52N20T 2014-7-2 6 www.kersemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS Dr i v e r R G Sam e Type as D U T V GS

  • dv/ dt cont r ol l ed by R G SD cont r ol l ed by pul se per i od V DD L I SD 10V V GS ( D riv e r ) I SD ( DUT ) V DS ( DUT ) V DD Body Di ode For war d Vol t a g e D r op V SD I FM , Body Di ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode Recover y dv/ dt di / dt D = G at e Pul se W i dt h DUT V DS Dr i v e r R G Sam e Type as D U T V GS
  • dv/ dt cont r ol l ed by R G SD cont r ol l ed by pul se per i od V DD L L I SD 10V V GS ( D riv e r ) I SD ( DUT ) V DS ( DUT ) V DD Body Di ode For war d Vol t a g e D r op V SD I FM , Body Di ode For w ar d C ur r ent Body D i ode R ever se C ur r ent I RM Body D i ode Recover y dv/ dt di / dt D = G at e Pul se W i dt h 2014-7-2 7 www.kersemi.com o KSM52N20 / KSMF52N20T

4.50 ±0.20 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 2.80 ±0.10 15.90 ±0.20 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45 9.20 ±0.20 13.08 ±0.20 1.30 ±0.10 1.30 +0.10 –0.05 0.50 +0.10 –0.05 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 TO-220 2014-7-2 8 www.kersemi.com o KSM52N20 / KSMF52N20T

(7.00) (0.70) MAX1.47 (30 3.30 ±0.10 15.80 ±0.20 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20 2.54TYP [2.54 ±0.20 0.50 +0.10 –0.05 KSM52N20 / KSMF52N20T 2014-7-2 9 www.kersemi.com