MEM2311SG BYCHIP | Alldatasheet

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Features

 VDS= -30V, ID= -5 A RDS(ON) < 37mΩ @ VGS = -10V RDS(ON) < 52mΩ @ VGS = -4.5V

  • Advanced Trench Technology
  • Provide Excellent RDS(ON) and Low Gate Charge
  • Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features SOP-8（Dual） Schematic diagram Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Continuous Drain Current ID -5 A Pulsed Drain Current (note1) I DM -20 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.6 W Single pulse avalanche energy （note2） EAS 12 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 78 ºC/W www.bychip.cn Pin Assignment MEM2311SG v1.0

Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -3 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -5A -- 37 mΩ VGS = -4.5V, ID = -4A -- 52 gFS VDS = -5V,ID = -5A -- 6.2 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1.0MHz -- 592 -- pFOutput Capacitance Coss -- 76 -- Reverse Transfer Capacitance Crss -- 66 -- Total Gate Charge Qg VDD = -15V, ID = -5A, VGS = -10V -- 11 -- nCGate-Source Charge Qgs -- 2 -- Gate-Drain Charge Qgd -- 3 -- Turn-on Delay Time td(on) VDD = -15V, ID = -5A, RG = 3Ω -- 13 -- ns Turn-on Rise Time tr -- 7 -- Turn-off Delay Time td(off) -- 14 -- Turn-off Fall Time tf -- 9 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -5 A Body Diode Voltage VSD TJ = 25ºC, ISD = -5A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -5A, VGS = 0V di/dt=-100A/us -- 5.3 -- nC Reverse Recovery Time Trr -- 11 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25 ℃ ,VDD=-30V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical R G Forward Transconductance www.bychip.cn MEM2311SG v2.0

www.bychip.cn MEM2311SG v3.0