ME90N03 BYCHIP | Alldatasheet
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Technical content
Features
VDS= 30V, ID= 150A RDS(ON) < 2.5mΩ @ VGS = 10V RDS(ON) < 4.0mΩ @ VGS = 4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-SourceVoltage VDS 30 V Gate-SourceVoltage VGS ±20 V DrainCurrent-Continuous ID 150 A DrainCurrent-Continuous(TC=100℃) ID (100℃) 105 A PulsedDrainCurrent IDM 600 A MaximumPowe r Dissipation PD 130 W Deratingfactor 0.87 W/℃ Singlepulseavalanche energy (Note 5) EAS 900 mJ OperatingJunctionandStorageTemperature Range TJ,TSTG -55To175 ℃ Thermal Characteristic ThermalResistance,Junction-to-Case(Note 2) RθJC 1.15 ℃/W www.bychip.cn Pin Assignment TO-252-2L Top View Schematic Diagram ME90N03 v1.0
Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-SourceBreakdown Voltage BVDSS VGS=0VID=250μA 30 - V ZeroGateVoltageDrainCurrent IDSS VDS=30V,VGS=0V - - 1 μA Gate-BodyLeakageCurrent IGSS VGS=±20V,VDS=0V - - ±100 nA On Ch aracteristics (Note 3) GateThresholdVoltage VGS(th) VDS=VGS,ID=250μA 1.2 3.0 V Drain-SourceOn-StateResistance RDS(ON) VGS=10V, ID=20A - 2.5 mΩ VGS=4.5V, ID=20A 4.0 ForwardTransconductance gFS VDS=10V,ID=20A 32 - - S Dynamic Characteristics(Note4) InputCapacitance Clss VDS=15V,VGS=0V, F=1.0MHz - 5235 - PF OutputCapacitance Coss - 770 - PF ReverseTransfer Capacitance Crss - 624 - PF Switching Characteristics(Note 4) Turn-onDelayTime td(on) VDD=15V,ID=20A VGS=10V,RG=2.5Ω - 26 - nS Turn-onRiseTime tr - 24 - nS Turn-Off DelayTime td(off) - 91 - nS Turn-Off FallTime tf - 39 - nS TotalGateCharge Qg VDS=15V,ID=20A, VGS=10V - 106 nC Gate-SourceCharge Qgs - 11 nC Gate-DrainCharge Qgd - 25 nC Drain-Source Diode Characteristics DiodeForward Voltage(Note 3) VSD VGS=0V,IS=20A - - 1.2 V DiodeForward Current(Note 2) IS - - 150 A ReverseRecoveryTime trr TJ = 25°C, IF= 20A di/dt =100A/μs(Note3) - 42 - nS ReverseRecoveryCharge Qrr - 39 - nC ForwardTurn-On Time ton Intrinsicturn-on timeisnegligible(turn-onisdominated byLS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤10 sec. 3. Pulse Test: Pulse Width ≤300μs,Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition :Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω. www.bychip.cn ME90N03 v2.0
1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.bychip.cn ME90N03 v3.0