ME85P03 BYCHIP | Alldatasheet

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Technical content

Features

 VDS= -30V, ID= -60A RDS(ON) < 9 mΩ @ VGS = -10V RDS(ON) < 11mΩ @ VGS = -4.5V

  • Advanced Trench Technology
  • Provide Excellent RDS(ON) and Low Gate Charge
  • Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features www.bychip.cn Pin Assignment Schematic DiagramTO-252-2L Top View ME85P03 v1.0

SPECIFICATIONS (TJ= 25°C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-SourceBreakdown Voltage VDS VGS =0V,I D= - 250µA -30 V GateThresholdVoltage VGS(th) VDS =VGS,ID=-250 µA -1 -3 Gate-BodyLeakage IGSS VDS= 0V,VGS= ±20V ±100 nA ZeroGateVoltage DrainCurrent IDSS VDS= -30 V,VGS= 0V -1 µAVDS= - 30V,VGS= 0V,TJ= 125 °C - 50 VDS= - 30V,VGS= 0V,TJ= 175 °C -250 On-StateDrain Currenta ID(on) VDS =- 5V,V GS=- 10V - 120 A Drain-SourceOn-StateResistance a RDS(on) VGS= - 10V,ID= -30 A 0.009 VGS=- 10 V,ID=- 30A,T J=125 °C 0.012 VGS=- 10 V,ID=- 30A,T J=175 °C 0.013 VGS =- 4.5V,I D=- 20 A 0.011 Forward Transconductancea gfs VDS =- 15V,I D= - 75A 20 S Dynamicb InputCapacitance Ciss VGS =0 V,VDS= -25 V,f= 1 MHz 4000 pFOutputCapacitance Coss 1565 Reversen TransferCapacitance Crss 715 TotalGateCharge c Qg VDS= -15 V,VGS=- 10 V,ID=- 75 A 160 240 nCGate-SourceChargec Qgs 32 Gate-DrainChargec Qgd 30 Turn-OnDelayTime c td(on) VDD= - 15V,RL= 0.2 ID -75 A,VGEN= -10 V,Rg= 2.5 25 40 ns RiseTimec tr 225 360 Turn-OffDelayTime c td(off) 150 240 FallTimec tf 210 340 Source-Drain Diode Ratings and Characteristicsb (TC= 25°C) ContinuousCurrent IS - 70 A PulsedCurrent ISM -240 Forward Voltagea VSD IF=- 75A,V GS =0V - 1.2 -1.5 V ReverseRecoveryTime trr IF=- 75 A,dI/dt=100 A/µs 55 100 ns PeakReverse RecoveryCurrent IRM(REC) 2.5 5 A Reverse RecoveryCharge Qrr 0.07 0.25 µC Notes: a. Pulsetest;pulsewidth  300µs,dutycycle  2 %. b. Guaranteedbydesign,notsubjectto productiontesting. c.Independent ofoperatingtemperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.bychip.cn ME85P03 v2.0

VGS= 10 V thru 6V 3 V 4 V 5 V TC= - 55 °C 25°C 125°C Ciss Crss Coss VGS-Gate-to-Source Voltage (V) ID- Drain Current (A) TYPICAL CHARACTERISTICS(25 °C, unless otherwise noted) 250 200 200 160 150 120 100 80 50 40 0 2 4 6 8 10 VDS -Drain-to-SourceVoltage(V) Output Characteristics 0 1 2 3 4 5 6 VGS-Gate-to-SourceVoltage(V) Transfer Characteristics 150 0.036 0.030 120 0.024 0.018 0.012 30 0.006 0 20 40 60 80 100 ID-Drain Current(A) Transconductance 0 20 40 60 80 100 120 ID- DrainCurrent (A) On-Resistance vs. Drain Current 12000 20 10000 16 8000 6000 4000 2000 0 6 12 18 24 30 VDS- Drain-to-Source Voltage (V) Capacitance 0 50 100 150 200 250 300 Qg -Total GateCharge(nC) Gate Charge TC= -55 °C 25 °C 125 °C VGS= 4.5 V VGS= 10V VDS= 15 V ID= 75 A ID-Drain Current (A)C -Capacitance (pF) gfs -Transconductance (S) RDS(on)-On-Resistance () www.bychip.cn ME85P03 v3.0

VGS= 10 V ID= 30 A IS- Source Current (A) TYPICAL CHARACTERISTICS(25 °C, unless otherwise noted) 1.8 100 1.5 1.2 0.9 10 0.6 0.3 -50 -25 0 25 50 75100 125150 175 TJ-JunctionTemperature (°C) On-Resistance vs. Junction Temperature VSD-Source-to-DrainVoltage(V) Source-Drain Diode Forward Voltage 1000 100 IAV(A) at TA= 150 °C IAV(A)at TA= 25 °C tin (s) Avalanche Current vs. Time TJ -JunctionTemperature(°C) Drain Source Breakdown vs. JunctionTemperature TJ= 150 °C TJ= 25 °C RDS(on)-On-Resistance (Normalized)IDav(a) VDS(V) ID= 250 µA 0.1 25 www.bychip.cn ME85P03 v4.0

ID- Drain Current (A) THERMAL RATINGS 90 1000 100 45 10 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC-CaseTemperature(°C) Maximum Avalanche and Drain Current vs. Case Temperature VDS-Drain-to-SourceVoltage(V) * VGS minimumVGSat whichRDS(on)is specified Safe Operating Area 0.1 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square WavePulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 100 µs Limited by RDS(on)* 1ms 10 ms 100 ms DC TC= 25 °C Single Pulse Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse Normalized Effective Transient Thermal Impedance ID- Drain Current (A) www.bychip.cn ME85P03 v5.0