MCR8M KERSEMI | Alldatasheet

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/C0077/C0067/C0082/C0056/C0077/C0044 /C0077/C0067/C0082/C0056/C0078 Preferred Device /C0083/C0105/C0108/C0105/C0099/C0111/C0110 /C0067/C0111/C0110/C0116/C0114/C0111/C0108/C0108/C0101/C0100 /C0082/C0101/C0099/C0116/C0105/C0102/C0105/C0101/C0114/C0115 Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. Blocking V oltage of 600 thru 800 V olts On–State Current Rating of 8 Amperes RMS at 80°C High Surge Current Capability — 80 Amperes Rugged, Economical TO220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design High Immunity to dv/dt — 100 V/µsec Minimum at 125°C Device Marking: Logo, Device Type, e.g., MCR8N, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8M MCR8N VDRM, VRRM 600 800 Volts On-State RMS Current (180° Conduction Angles; TC = 80°C) IT(RMS) 8.0 Amps Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TC = 125°C) ITSM Amps Circuit Fusing Consideration (t = 8.33 ms) I2t 26.5 A2sec Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 5.0 Watts Forward Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.5 Watt Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) IGM 2.0 Amps Operating Junction Temperature Range TJ –40 to 125 Storage Temperature Range Tstg –40 to 150 (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. SCRs

8 AMPERES RMS

Preferred devices are recommended choices for future use and best overall value. Device Package Shipping

ORDERING INFORMATION

MCR8M TO220AB 50 Units/Rail www.kersemi.com K G A TO–220AB CASE 221A STYLE 3 2 3 PIN ASSIGNMENT Anode Gate Cathode

4 Anode

MCR8N TO220AB 50 Units/Rail

MCR8M, MCR8N www.kersemi.com THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance — Junction to Case — Junction to Ambient R θJC R θJA 2.2 62.5 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260

ELECTRICAL CHARACTERISTICS

(TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VD = Rated VDRM and VRRM ; Gate Open) T J = 25°C TJ = 125°C IDRM , IRRM 0.01 2.0 mA ON CHARACTERISTICS Peak Forward On–State Voltage* (ITM = 16 A) VTM 1.8 Volts Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 Ω ) IGT 2.0 7.0 mA Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) IH 4.0 mA Latch Current (VD = 12 V, IG = 15 mA) IL 6.0 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V; 100 Ω )T J = 25°C VGT 0.5 0.65 1.0 Volts Gate Non–Trigger Voltage (VD = 12 V; RL = 100 Ω )T J = 125°C VGD 0.2 Volts DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM , Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 100 250 V/µs Critical Rate of Rise of On–State Current IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 50 mA di/dt A/µs *Indicates Pulse Test: Pulse Width /C01182.0 ms, Duty Cycle /C01182%.

MCR8M, MCR8N PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 Q H Z L V G N A K 12 3 D SEATING PLANE –T– C ST U R J STYLE 3: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE www.kersemi.com