MCR8DSM KERSEMI | Alldatasheet

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Features

Pb−Free Package is Available Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Available in Two Package Styles Surface Mount Lead Form − Case 369C Miniature Plastic Package − Straight Leads − Case 369 Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V MAXIMUM RATINGS J = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (T J = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8DSM MCR8DSN V DRM, V RRM 600 800 V On−State RMS Current (180° Conduction Angles; T C = 90°C) I T(RMS) 8.0 A Average On−State Current (180° Conduction Angles; T C = 90°C) I T(AV) 5.1 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, T J = 110°C) I TSM A Circuit Fusing Consideration (t = 8.3 msec) I t A sec Forward Peak Gate Power (Pulse Width ≤ 1.0 sec, T C = 90°C) P GM 5.0 W Forward Average Gate Power (t = 8.3 msec, T C = 90°C) P G(AV) 0.5 W Forward Peak Gate Current (Pulse Width ≤ 1.0 sec, T C = 90°C) I GM 2.0 A Operating Junction Temperature Range T J −40 to 110 Storage Temperature Range T stg −40 to 150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. SCRs

8 AMPERES RMS

600 − 800 VOLTS Preferred devices are recommended choices for future use and best overall value. K G A PIN ASSIGNMENT Anode Gate Cathode

4 Anode

Y = Year WW = Work Week x = M or N 1 2 YWW CR 8DSx See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

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MCR8DSM, MCR8DSN www.kersemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance − Junction−to−Case Thermal Resistance − Junction−to−Ambient Thermal Resistance − Junction−to−Ambient (Note 2) R JC R JA R JA 2.2 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T L 260

ELECTRICAL CHARACTERISTICS

J = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current AK = Rated V DRM or V RRM ; R GK = 1.0 k) (Note 3) T J = 25°C T J = 110°C I DRM I RRM 500 A ON CHARACTERISTICS Peak Reverse Gate Blocking Voltage GR = 10 A) V GRM 12.5 V Peak Reverse Gate Blocking Current GR = 10 V) I RGM 1.2 A Peak Forward On−State Voltage (Note 4) TM = 16 A) V TM 1.4 1.8 V Gate Trigger Current (Continuous dc) (Note 5) D = 12 V, R L = 100 )T J = 25°C T J = −40°C I GT 5.0 200 300 A Gate Trigger Voltage (Continuous dc) (Note 5) D = 12 V, R L = 100 )T J = 25°C T J = −40°C T J = 110°C V GT 0.45 0.2 0.65 1.0 1.5 V Holding Current D = 12 V, Initiating Current = 200 mA, Gate Open) T J = 25°C T J = −40°C I H 0.5 1.0 6.0 mA Latching Current D = 12 V, I G = 2.0 mA) T J = 25°C T J = −40°C I L 0.5 1.0 6.0 mA Total Turn−On Time (Source Voltage = 12 V, R S = 6.0 k, I T = 16 A(pk), R GK = 1.0 k) D = Rated V DRM , Rise Time = 20kns, Pulse Width = 10 s) tgt 2.0 5.0 s DYNAMIC CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Critical Rate of Rise of Off−State Voltage D = 0.67 X Rated V DRM , Exponential Waveform, R GK = 1.0 k, T J = 110°C) dv/dt 2.0 V/s 2. Surface mounted on minimum recommended pad size. 3. Ratings apply for negative gate voltage or R GK = 1.0 k. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. 5. R GK current not included in measurements. 16 mm Tape & Reel (2.5 k / Reel) MCR8DSMT4G DPAK (Pb−Free) 16 mm Tape & Reel (2.5 k / Reel) MCR8DSNT4 DPAK 16 mm Tape & Reel (2.5 k / Reel) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Figure 1. Average Current Derating Figure 2. On−State Power Dissipation

MCR8DSM, MCR8DSN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O D A K B RV S F L G 2 PL M 0.13 (0.005) T E C U J H −T− SEATING PLANE Z DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 123 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE www.kersemi.com