MCR72-3 KERSEMI | Alldatasheet

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Technical content

/C0077/C0067/C0082/C0055/C0050/C0045/C0051/C0044 /C0077/C0067/C0082/C0055/C0050/C0045/C0054/C0044 /C0077/C0067/C0082/C0055/C0050/C0045/C0056 Preferred Device /C0083/C0101/C0110/C0115/C0105/C0116/C0105/C0118/C0101 /C0071/C0097/C0116/C0101 /C0083/C0105/C0108/C0105/C0099/C0111/C0110 /C0067/C0111/C0110/C0116/C0114/C0111/C0108/C0108/C0101/C0100 /C0082/C0101/C0099/C0116/C0105/C0102/C0105/C0101/C0114/C0115 Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. Center Gate Geometry for Uniform Current Density All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Low Trigger Currents, 200 µA Maximum for Direct Driving from Integrated Circuits Device Marking: Logo, Device Type, e.g., MCR72–3, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage(1) (TJ = /C004240 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR72–3 MCR72–6 MCR72–8 VDRM, VRRM 100 400 600 Volts On-State RMS Current (180° Conduction Angles; TC = 83°C) IT(RMS) 8.0 Amps Peak Non-Repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = 110°C) ITSM 100 Amps Circuit Fusing Considerations (t = 8.3 ms) I2t A2s Forward Peak Gate Voltage (t ≤ 10 µs, TC = 83°C) VGM /C00345.0 Volts Forward Peak Gate Current (t ≤ 10 µs, TC = 83°C) IGM 1.0 Amp Forward Peak Gate Power (t ≤ 10 µs, TC = 83°C) PGM 5.0 Watts Average Gate Power (t = 8.3 ms, TC = 83°C) PG(AV) 0.75 Watt Operating Junction Temperature Range TJ –40 to +110 Storage Temperature Range Tstg –40 to +150 Mounting Torque 8.0 in. lb. (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. SCRs

8 AMPERES RMS

ORDERING INFORMATION

MCR72–3 TO220AB 500/Box www.kersemi.com K G A TO–220AB CASE 221A STYLE 3 2 3 PIN ASSIGNMENT Anode Gate Cathode

4 Anode

MCR72–6 TO220AB 500/Box MCR72–8 TO220AB 500/Box Preferred devices are recommended choices for future use and best overall value.

MCR72–3, MCR72–6, MCR72–8 www.kersemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 2.2 °C/W Thermal Resistance, Junction to Ambient R θJA °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current(1) (VAK = Rated VDRM or VRRM ; RGK = 1 kΩ )T J = 25°C TJ = 110°C IDRM , IRRM 500 µA µA ON CHARACTERISTICS Peak Forward On-State Voltage (ITM = 16 A Peak, Pulse Width /C01121 ms, Duty Cycle /C01122%) VTM 1.7 2.0 Volts Gate Trigger Current (Continuous dc)(2) (VD = 12 V, RL = 100 Ω ) IGT 200 µA Gate Trigger Voltage (Continuous dc)(2) (VD = 12 V, RL = 100 Ω ) VGT 0.5 1.5 Volts Gate Non–Trigger Voltage (VD = 12 Vdc, RL = 100 Ω , TJ = 110°C) VGD 0.1 Volts Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) IH 6.0 mA Gate Controlled Turn-On Time (VD = Rated VDRM , ITM = 16 A, IG = 2 mA) tgt 1.0 µs DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM , RGK = 1 kΩ , TJ = 110°C, Exponential Waveform) dv/dt V/µs (1) Ratings apply for negative gate voltage or RGK = 1 kΩ . Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. (2) RGK current not included in measurement.

MCR72–3, MCR72–6, MCR72–8 PACKAGE DIMENSIONS TO–220AB CASE 221A–07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 A K L V G D N Z H Q FB 123 –T– SEATING PLANE S R J U T C STYLE 3: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE www.kersemi.com