MCR703A KERSEMI | Alldatasheet
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Pb−Free Package is Available Small Size Passivated Die Surface for Reliability and Uniformity Low Level Triggering and Holding Characteristics Recommend Electrical Replacement for C106 Surface Mount Package − Case 369C To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves): − Add ’1’ Suffix to Device Number, i.e., MCR706A1 Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V SCRs
4.0 AMPERES RMS
100 − 600 VOLTS K G A PIN ASSIGNMENT Anode Cathode Gate
4 Anode
Preferred devices are recommended choices for future use and best overall value. DPAK CASE 369C STYLE 2 MARKING DIAGRAMS Y = Year WW = Work Week x = 3, 6, or 8 1 2 YWW CR 70xA DPAK−3 CASE 369D STYLE 2 2 3 YWW CR 70xA See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
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www.kersemi.com MAXIMUM RATINGS J = 25°C unless otherwise noted) Rating Symbol Max Unit Peak Repetitive Off−State Voltage (Note 1) C = −40 to +110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR703A MCR706A MCR708A V DRM, V RRM 100 400 600 V Peak Non-Repetitive Off−State Voltage (Sine Wave, 50 to 60 Hz, Gate Open, T C = −40 to +110°C) MCR703A MCR706A MCR708A V RSM 150 450 650 V On−State RMS Current (180° Conduction Angles; T C = 90°C) I T(RMS) 4.0 A Average On−State Current (180° Conduction Angles) T C = −40 to +90°C T C = +100°C I T(AV) 2.6 1.6 A Non-Repetitive Surge Current (1/2 Sine Wave, 60 Hz, T J = 110°C) (1/2 Sine Wave, 1.5 ms, T J = 110°C) I TSM A Circuit Fusing (t = 8.3 msec) I t 2.6 A sec Forward Peak Gate Power (Pulse Width ≤ 1.0 sec, T C = 90°C) P GM 0.5 W Forward Average Gate Power (t = 8.3 msec, T C = 90°C) P G(AV) 0.1 W Forward Peak Gate Current (Pulse Width ≤ 1.0 sec, T C = 90°C) I GM 0.2 A Operating Junction Temperature Range T J −40 to +110 Storage Temperature Range T stg −40 to +150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R JC 8.33 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) R JA °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T L 260 2. Case 369C when surface mounted on minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
C = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current AK = Rated V DRM or V RRM ; R GK = 1 K)T C = 25°C T C = 110°C I DRM , I RRM 200 A ON CHARACTERISTICS Peak Forward “On” Voltage TM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) V TM 2.2 V Gate Trigger Current (Continuous dc) (Note 3) AK = 12 Vdc, R L = 24 Ohms) T C = 25°C T C = −40°C I GT 300 A Gate Trigger Voltage (Continuous dc) (Note 3) T C = 25°C AK = 12 Vdc, R L = 24 Ohms) T C = −40°C V GT 0.8 1.0 V Gate Non-Trigger Voltage (Note 3) AK = 12 Vdc, R L = 100 Ohms, T C = 110°C) V GD 0.2 V Holding Current AK = 12 Vdc, Gate Open) T C = 25°C (Initiating Current = 200 mA) T C = −40°C I H 5.0 mA Peak Reverse Gate Blocking Voltage GR = 10 A) V RGM 12.5 V Peak Reverse Gate Blocking Current GR = 10 V) I RGM 1.2 A Total Turn-On Time (Source Voltage = 12 V, R S = 6 k) TM = 8.2 A, I GT = 2 mA, Rated V DRM (Rise Time = 20 ns, Pulse Width = 10 s) t gt 2.0 s DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage D = Rated V DRM , R GK = 1 k, Exponential Waveform, T C = 110°C) dv/dt V/s Repetitive Critical Rate of Rise of On−State Current (Cf = 60 Hz, I PK = 30 A, PW = 100 s, diG/dt = 1 A/s) di/dt 100 A/s 3. R GK current not included in measurement.
2500 Tape & Reel
(Pb−Free) 369C DPAK−3 369D
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.kersemi.com
D A K B RV S F L G 2 PL M 0.13 (0.005) T E C U J H −T− SEATING PLANE Z DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.180 0.215 4.57 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 123 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN www.kersemi.com
DPAK−3 CASE 369D−01 ISSUE B 123 V S A K −T− SEATING PLANE R B F G D 3 PL M 0.13 (0.005) T C E J H DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.235 0.245 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 G 0.090 BSC 2.29 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Z STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN www.kersemi.com