MCR69-2

MCR69-2 KERSEMI | Alldatasheet

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Technical content

/C0077/C0067/C0082/C0054/C0057/C0045/C0050/C0044 /C0077/C0067/C0082/C0054/C0057/C0045/C0051 /C0083/C0105/C0108/C0105/C0099/C0111/C0110 /C0067/C0111/C0110/C0116/C0114/C0111/C0108/C0108/C0101/C0100 /C0082/C0101/C0099/C0116/C0105/C0102/C0105/C0101/C0114/C0115 Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability High Capacitor Discharge Current, 750 Amps Device Marking: Logo, Device Type, e.g., MCR69–2, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage(1) (TJ = /C004240 to +125°C, Gate Open) MCR69–2 MCR69–3 VDRM, VRRM 100 Volts Peak Discharge Current(2) ITM 750 Amps On-State RMS Current (180° Conduction Angles; TC = 85°C) IT(RMS) Amps Average On-State Current (180° Conduction Angles; TC = 85°C) IT(AV) Amps Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) ITSM 300 Amps Circuit Fusing Considerations (t = 8.3 ms) I2t 375 A2s Forward Peak Gate Current (t ≤ 1.0 µs, TC = 85°C) IGM 2.0 Amps Forward Peak Gate Power (t ≤ 1.0 µs, TC = 85°C) PGM Watts Forward Average Gate Power (t = 8.3 ms, TC = 85°C) PG(AV) 0.5 Watt Operating Junction Temperature Range TJ –40 to +125 Storage Temperature Range Tstg –40 to +150 Mounting Torque 8.0 in. lb. (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse. (3) Test Conditions: IG = 150 mA, VD = Rated VDRM , ITM = Rated Value, TJ = 125°C. SCRs

25 AMPERES RMS

ORDERING INFORMATION

MCR69–2 TO220AB 500/Box www.kersemi.com K G A TO–220AB CASE 221A STYLE 3 2 3 PIN ASSIGNMENT Anode Gate Cathode

4 Anode

MCR69–3 TO220AB 500/Box

MCR69–2, MCR69–3 www.kersemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 1.5 °C/W Thermal Resistance, Junction to Ambient R θJA °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM , Gate Open) T J = 25°C TJ = 125°C IDRM , IRRM 2.0 µA mA ON CHARACTERISTICS Peak Forward On-State Voltage (ITM = 50 A)(1) (ITM = 750 A, tw = 1 ms)(2) VTM 6.0 1.8 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω ) IGT 2.0 7.0 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω ) VGT 0.65 1.5 Volts Gate Non–Trigger Voltage (VD = 12 Vdc, RL = 100 Ω , TJ = 125°C) VGD 0.2 0.40 Volts Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) IH 3.0 mA Latching Current (VD = 12 Vdc, IG = 150 mA) IL mA Gate Controlled Turn-On Time(3) (VD = Rated VDRM , IG = 150 mA) (ITM = 50 A Peak) tgt 1.0 µs DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM , Gate Open, Exponential Waveform, TJ = 125°C) dv/dt V/µs Critical Rate-of-Rise of On-State Current IG = 150 mA T J = 125°C di/dt 100 A/µs (1) Pulse duration /C0112 300 µs, duty cycle /C0112 2%. (2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. (3) The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.

MCR69–2, MCR69–3 PACKAGE DIMENSIONS TO–220AB CASE 221A–07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 A K L V G D N Z H Q FB 123 –T– SEATING PLANE S R J U T C STYLE 3: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE www.kersemi.com