MCR68-2 KERSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
/C0077/C0067/C0082/C0054/C0056/C0045/C0050 /C0083/C0105/C0108/C0105/C0099/C0111/C0110 /C0067/C0111/C0110/C0116/C0114/C0111/C0108/C0108/C0101/C0100 /C0082/C0101/C0099/C0116/C0105/C0102/C0105/C0101/C0114/C0115 Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability High Capacitor Discharge Current, 300 Amps Device Marking: Logo, Device Type, e.g., MCR68–2, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage(1) (TJ = /C004240 to +125°C, Gate Open) MCR68–2 VDRM, VRRM Volts Peak Discharge Current(2) ITM 300 Amps On-State RMS Current (180° Conduction Angles; TC = 85°C) IT(RMS) Amps Average On-State Current (180° Conduction Angles; TC = 85°C) IT(AV) 8.0 Amps Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) ITSM 100 Amps Circuit Fusing Considerations (t = 8.3 ms) I2t A2s Forward Peak Gate Current (t ≤ 1.0 µs, TC = 85°C) IGM 2.0 Amps Forward Peak Gate Power (t ≤ 1.0 µs, TC = 85°C) PGM Watts Forward Average Gate Power (t = 8.3 ms, TC = 85°C) PG(AV) 0.5 Watt Operating Junction Temperature Range TJ –40 to +125 Storage Temperature Range Tstg –40 to +150 Mounting Torque 8.0 in. lb. (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse. SCRs
12 AMPERES RMS
50 VOLTS
ORDERING INFORMATION
MCR68–2 TO220AB 500/Box www.kersemi.com K G A TO–220AB CASE 221A STYLE 3 2 3 PIN ASSIGNMENT Anode Gate Cathode
4 Anode
MCR68–2 www.kersemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 2.0 °C/W Thermal Resistance, Junction to Ambient R θJA °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM , Gate Open) T J = 25°C TJ = 125°C IDRM , IRRM 2.0 µA mA ON CHARACTERISTICS Peak Forward On-State Voltage (ITM = 24 A)(1) (ITM = 300 A, tw = 1 ms)(2) VTM 6.0 2.2 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω ) IGT 2.0 7.0 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω ) VGT 0.65 1.5 Volts Gate Non–Trigger Voltage (VD = 12 Vdc, RL = 100 Ω , TJ = 125°C) VGD 0.2 0.40 Volts Holding Current (VD = 12 V, Initiating Current = 200 mA, Gate Open) IH 3.0 mA Latching Current (VD = 12 Vdc, IG = 150 mA) IL mA Gate Controlled Turn-On Time(3) (VD = Rated VDRM , IG = 150 mA) (ITM = 24 A Peak) tgt 1.0 µs DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM , Gate Open, Exponential Waveform, TJ = 125°C) dv/dt V/µs Critical Rate-of-Rise of On-State Current IG = 150 mA T J = 125°C di/dt A/µs (1) Pulse duration /C0112 300 µs, duty cycle /C0112 2%. (2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. (3) The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
MCR68–2 PACKAGE DIMENSIONS TO–220AB CASE 221A–07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 A K L V G D N Z H Q FB 123 –T– SEATING PLANE S R J U T C STYLE 3: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE www.kersemi.com
MCR68–2 http://onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone : 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–asia@hibbertco.com JAPAN : ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–8549 Phone : 81–3–5740–2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MCR68/D NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone : (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time) Email: ONlit–german@hibbertco.com French Phone : (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time) Email: ONlit–french@hibbertco.com English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, England, Ireland