MCR310-6 KERSEMI | Alldatasheet

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Technical content

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. Center Gate Geometry for Uniform Current Density All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Low Trigger Currents, 200 /C0109A Maximum for Direct Driving from Integrated Circuits Pb−Free Packages are Available MAXIMUM RATINGS J = 25°C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage (1) J = −40 to 110°C) (1/2 Sine Wave, R GK = 1 kΩ) MCR310-6 MCR310-8 MCR310-10 V DRM or V RRM 400 600 800 Volts On-State RMS Current (T C = 75°C) I T(RMS) Amps Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, T J = −40 to 110°C) I TSM 100 Amps Circuit Fusing (t = 8.3 ms) I t A s Peak Gate Voltage (t /C0112 10 /C0109s) V GM Volts Peak Gate Current (t /C0112 10 /C0109s) I GM Amp Peak Gate Power (t /C0112 10 /C0109s) P GM Watts Average Gate Power P G(AV) 0.75 Watt Operating Junction Temperature Range T J −40 to +110 Storage Temperature Range T stg −40 to +150 Mounting Torque in.-lb. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 2.2 °C/W Thermal Resistance, Junction to Ambient R θJA °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. (1) V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. SCRs

10 AMPERES RMS

ORDERING INFORMATION

MCR310−6 TO220AB 500/Box MCR310−8 TO220AB MCR310−10 TO220AB 500/Box 500/Box C G A TO−220AB CASE 221A STYLE 3 2 3 www.kersemi.com MARKING DIAGRAM x = 6, 8 or 10 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package MCR310−6G TO220AB (Pb−Free) 500/Box MCR310−8G TO220AB (Pb−Free) 500/Box MCR310−10G TO220AB (Pb−Free) 500/Box MCR310−xG AYWW Preferred devices are recommended choices for future use and best overall value.

TO−220AB CASE 221A−09 ISSUE AA STYLE 3: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE −T− C ST U R J www.kersemi.com