MCR310 HAOPIN | Alldatasheet
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1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. SCRs MCR310TM HPM
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Pin Description Cathode Anode Gate Simplified outline 123 TO-220 Symbol a g k UNITSYMBOL PARAMETER VDRM 400 600 800 ITR M S 10 MCR310-6 MCR310-8 MCR310-10 Repetitive peak off-state voltages On-state rms current ITSM 100 V V A APeak non-repetitive surge current SYMBOL PARAMETER MAX UNITCONDITIONS TYPMIN Rth j-a Thermal resistance Junction to ambient - /W- 60 Rth j-c Thermal resistance Junction to Case /W2.2- - (Tj=-40 to 110 C 1/2Sine Wave,RGK=1K o Value
2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs Limiting values in accordance with the Maximum system(IEC 134) A A A AS SYMBOL PARAMETER CONDITIONS MIN MAX UNIT SYMBOL PARAMETER CONDITIONS MIN V V DRM RRM IT(RMS) ITSM It IGM VGM PGM Tstg Tj PG(AV) Repetitive peak off-state Voltages RMS on-state current Non-repetitive peak On-state current I t for fusing Forward peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction Temperature Range V V A W W
180 Cconduction angles;TC=75
1/2Cycle.60 Hz, Tj=-40 to110 Tj=-40to110,1/2Sine Wave,RGK=1k T=8.3ms MCR310-6 MCR310-8 MCR310-10 T<=10us,TC=83 T<=10us,TC=83 T<=10us,TC=83 T<=10us,TC=83 -40 -40 400 600 800 +110 T =25 C unless otherwise statedJ O Static characteristics IGT I I DRM RRM IH VTM VGT VGD Dynamic Characteristics D/ d tV tgt tg Gate trigger current Peak Forward Blocking current Tj=110 C,V =Rated V o D DRM TC=110 TC=25 TC=110 TC=25 Peak Reverse Blocking current Tj=110 C,V =Rated V o R RRM Holding current Peak forward on-state voltage Gate trigger voltage Gate non-trigger voltage Critical rate of rise of Off-state voltage Gate controlled turn-on Crcuit commutated tum- off time time V =12V; RL=100D V =12V;ITM=100mAD V =12V;RL=100D I =20A peak,pulse width<=1msTM V =Rated V ;R =10K T =110D DRM L J UNITMAXTYP 0.1 0.5 1.7 - - mA V V V Rated V ,R =1K ;Tj=110 ;D= DRM GK Exponential waveform; I =16A;V =Rated V ,IG=2mATM D DRM 20030 500 500 100 1.5 2.2 V 1.0 0.75 +150 s s V/ s A A A MCR310
3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MCR310
Net Mass: 2 g TO-220AB 5/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MCR310