MCR25 HAOPIN | Alldatasheet
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UnitSYMBOL PARAMETER Value VDRM 400 600 800 MCR25D MCR25M MCR25N V ITR M S 25 A ITSM 300 A Repetitive peak off-state voltages RMS on-state current full sine wave Non-repetitive peak on-state current (full cycle,Tj initial=25 ) Simplified outline 1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. SCRs MCR25TM HPM
Description
Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. 123 TO-220 Symbol a g k SYMBOL PARAMETER MAX UNITCONDITIONS TYPMIN Thermal resistance Junction to ambient - /W- 62.5 Rj c Rj A Thermal resistance Junction to Case /W1.5- -
Limiting values in accordance with the Maximum system(IEC 134) SYMBOL PARAMETER CONDITIONS MIN Value UNIT VDRM Repetitive peak off-state Voltages TJ=-40 to 125 ,sine wave, 50 to 60Hz,Gate Open V- 2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MCR25 400 600 800 MCR25D MCR25M MCR25N - 50 A A AS A/ s SYMBOL PARAMETER CONDITIONS MIN IT(RMS) ITSM It di/dt IGM TL PGM Tstg Tj PG(AV) RMS on-state current Non-repetitive peak On-state current I t for fusing Critical rate of rise of on-state current Ipk=50 A ,pw=30 sec, diG/dt=1 a/ sec,Igt=50 mA Forward peak gate current Maximum lead temperature for soldering purposes 1/8 from case for 10 seconds Peak gate power Average gate power Storage temperature Operating junction Temperature Range A W W
180 Cconduction angles;TC=80
1/2Cycle.sine wave 60 Hz, Tj=125 T=8.3ms pulse wodtj<=1.0 s,TC=80 pulse wodtj<=1.0 s,TC=80 T=8.3ms,TC=80 -40 -40 +125 O C T =25 C unless otherwise statedJ O Static characteristics IGT I I DRM RRM IH VTM VGT IL Dynamic Characteristics D/ d tV tgt tg Gate trigger current Tj=25 Tj=125 Peak Re[etotove fprward pr reverse b;pclomg cirrent (V =Rated V or V , Gate Poen) AK DRM RRM Holding current Peak forward on-state voltage Gate trigger voltage Latching current Critical rate of rise of Off-state voltage Gate controlled turn-on Crcuit commutated tum- off time time V =12V; RL=100D V =12Vdc;Initiating Current=200mA,gate opentD V =12V;RL=100D V =12V;IG=30 mAD I =50ATM UNITMAXTYP 5.0 - - 0.5 100 - - 250 0.67 35- 80 mA mA V V =67% of Rated V , Tj=125D DRM Exponential waveform; I =16A;V =Rated V ,IG=2mATM D DRM 3012 - - 0.01 2.0 300 373 1.0 1.8 V 2.0 260 0.5 +150 s s V/ s mA mA 4.0
3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MCR25
4/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MCR25
Net Mass: 2 g TO-220 5/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MCR25