MCR218-2 KERSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

/C0077/C0067/C0082/C0050/C0049/C0056/C0045/C0050/C0044 /C0077/C0067/C0082/C0050/C0049/C0056/C0045/C0052/C0044 /C0077/C0067/C0082/C0050/C0049/C0056/C0045/C0054 Preferred Device /C0083/C0105/C0108/C0105/C0099/C0111/C0110 /C0067/C0111/C0110/C0116/C0114/C0111/C0108/C0108/C0101/C0100 /C0082/C0101/C0099/C0116/C0105/C0102/C0105/C0101/C0114/C0115 Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. Glass-Passivated Junctions Blocking V oltage to 400 V olts TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and Durability Device Marking: Logo, Device Type, e.g., MCR218–2, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage(1) (TJ = /C004240 to 125°C, Gate Open) MCR218–2 MCR218–4 MCR218–6 VDRM, VRRM 200 400 Volts On-State RMS Current (180° Conduction Angles; TC = 70°C) IT(RMS) 8.0 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 100 A Circuit Fusing Considerations (t = 8.3 ms) I2t A2s Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 70°C) PGM 5.0 Watts Forward Average Gate Power (t = 8.3 ms, TC = 70°C) PG(AV) 0.5 Watts Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 70°C) IGM 2.0 A Operating Junction Temperature Range TJ –40 to +125 Storage Temperature Range Tstg –40 to +150 (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. SCRs

8 AMPERES RMS

Preferred devices are recommended choices for future use and best overall value. Device Package Shipping

ORDERING INFORMATION

MCR218–2 TO220AB 500/Box MCR218–4 TO220AB MCR218–6 TO220AB www.kersemi.com 500/Box 500/Box K G A TO–220AB CASE 221A STYLE 3 2 3 PIN ASSIGNMENT Anode Gate Cathode

4 Anode

MCR218–2, MCR218–4, MCR218–6 www.kersemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 2.0 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260

ELECTRICAL CHARACTERISTICS

(TJ = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM , Gate Open) T J = 25°C TJ = 125°C IDRM , IRRM 2.0 µA mA ON CHARACTERISTICS Peak Forward On-State Voltage(1) (ITM = 16 A Peak) VTM 1.5 1.8 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ohms) IGT mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ohms) VGT 1.5 Volts Gate Non–Trigger Voltage (Rated 12 V, RL = 100 Ohms, TJ = 125°C) VGD 0.2 Volts Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) IH mA DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM , Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 100 V/µs (1) Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.

Figure 1. Current Derating Figure 2. On–State Power Dissipation

MCR218–2, MCR218–4, MCR218–6 PACKAGE DIMENSIONS TO–220AB CASE 221A–07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 A K L V G D N Z H Q FB 123 –T– SEATING PLANE S R J U T C STYLE 3: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE www.kersemi.com