MCR100-003 KERSEMI | Alldatasheet
Document overview
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Technical content
Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for use in automatic insertion equipment. Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking V oltage to 600 V On−State Current Rating of 0.8 Amperes RMS at 80°C High Surge Current Capability — 10 A Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dV/dt — 20 V/sec Minimum at 110°C Glass-Passivated Surface for Reliability and Uniformity Device Marking: Device Type, e.g., MCR100−3, Date Code Pb−Free Packages are Available* MAXIMUM RATINGS J = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) J = 40 to 110°C, Sine Wave, 50 to
60 Hz; Gate Open) MCR100−3
MCR100−4 MCR100−6 MCR100−8 V DRM, V RRM 100 200 400 600 V On-State RMS Current C = 80°C) 180° Conduction Angles I T(RMS) 0.8 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, T J = 25°C) I TSM A Circuit Fusing Consideration (t = 8.3 ms) I t 0.415 A s Forward Peak Gate Power A = 25°C, Pulse Width 1.0 P GM 0.1 W Forward Average Gate Power A P G(AV) 0.10 W Forward Peak Gate Current A = 25°C, Pulse Width 1.0 I GM 1.0 A Reverse Peak Gate Voltage A = 25°C, Pulse Width 1.0 V GRM 5.0 V Operating Junction Temperature Range @ Rate V RRM and V DRM T J −40 to 110 Storage Temperature Range T stg −40 to 150 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. SCRs
0.8 A RMS
Preferred devices are recommended choices for future use and best overall value. TO−92 (TO−226) CASE 029 STYLE 10 PIN ASSIGNMENT Gate Anode Cathode K G A See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
www.kersemi.com *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
www.kersemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance − Junction−to−Case − Junction−to−Ambient R JC R JA 200 °C/W Lead Solder Temperature (1/16″ from case, 10 secs max) T L 260
ELECTRICAL CHARACTERISTICS
C = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 2) T C = 25°C D = Rated V DRM and V RRM ; R GK = 1 k)T C = 110°C I DRM , I RRM 100 A ON CHARACTERISTICS Peak Forward On−State Voltage TM = 1.0 A Peak @ T A = 25°C) V TM 1.7 V Gate Trigger Current (Continuous dc) (Note 3) T C = 25°C AK = 7.0 Vdc, R L = 100 ) I GT 200 A Holding Current (2) T C = 25°C AK = 7.0 Vdc, Initiating Current = 20 mA) T C = −40°C I H 0.5 5.0 mA Latch Current T C = 25°C AK = 7.0 V, Ig = 200 A) T C = −40°C I L 0.6 mA Gate Trigger Voltage (Continuous dc) (Note 3) T C = 25°C AK = 7.0 Vdc, R L = 100 )T C = −40°C V GT 0.62 0.8 1.2 V DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage D = Rated V DRM , Exponential Waveform, R GK = 1000 ,T J = 110°C) dV/dt V/s Critical Rate of Rise of On−State Current PK = 20 A; Pw = 10 sec; diG/dt = 1 A/sec, Igt = 20 mA) di/dt A/s *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 2. R GK = 1000 included in measurement. 3. Does not include R GK in measurement. + Current + Voltage V TM I DRM at V DRM I H Symbol Parameter V DRM Peak Repetitive Off State Forward Voltage I DRM Peak Forward Blocking Current V RRM Peak Repetitive Off State Reverse Voltage I RRM Peak Reverse Blocking Current V TM Peak on State Voltage I H Holding Current Voltage Current Characteristic of SCR Anode + on state Reverse Blocking Region (off state) Reverse Avalanche Region Anode − Forward Blocking Region I RRM at V RRM (off state)
Figure 7. Device Positioning on Tape
- Maximum alignment deviation between leads not to be greater than 0.2 mm.
- Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
- Component lead to tape adhesion must meet the pull test requirements.
- Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
- Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
- No more than 1 consecutive missing component is permitted.
- A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
- Splices will not interfere with the sprocket feed holes.
MCR100−003 MCR100−004
5000 Units / Bulk
MCR100−006 TO−92 (TO−226) MCR100−008 MCR100−3RL
2000 Units / Tape & Reel
MCR100−3RLG TO−92 (TO−226) (Pb−Free)
2000 Units / Tubes
MCR100−6RL TO−92 (TO−226) MCR100−6RLG TO−92 (TO−226) (Pb−Free) MCR100−6RLRA MCR100−6RLRM TO 92 (TO 226)
2000 Units / Ta
p e & Ammunition Box MCR100−6ZL1 TO−92 (TO−226)
2000 Units / Tape & Ammunition Box
MCR100−8RL †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.kersemi.com
STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE TO−92 (TO−226) CASE 029−11 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R A P J L B K G H SECTION X−X CV D N N XX SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 N 0.080 0.105 2.04 2.66 www.kersemi.com