MCR100-003 KERSEMI | Alldatasheet

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Technical content

Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for use in automatic insertion equipment. Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking V oltage to 600 V On−State Current Rating of 0.8 Amperes RMS at 80°C High Surge Current Capability — 10 A Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dV/dt — 20 V/sec Minimum at 110°C Glass-Passivated Surface for Reliability and Uniformity Device Marking: Device Type, e.g., MCR100−3, Date Code Pb−Free Packages are Available* MAXIMUM RATINGS J = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) J = 40 to 110°C, Sine Wave, 50 to

60 Hz; Gate Open) MCR100−3

MCR100−4 MCR100−6 MCR100−8 V DRM, V RRM 100 200 400 600 V On-State RMS Current C = 80°C) 180° Conduction Angles I T(RMS) 0.8 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, T J = 25°C) I TSM A Circuit Fusing Consideration (t = 8.3 ms) I t 0.415 A s Forward Peak Gate Power A = 25°C, Pulse Width 1.0 P GM 0.1 W Forward Average Gate Power A P G(AV) 0.10 W Forward Peak Gate Current A = 25°C, Pulse Width 1.0 I GM 1.0 A Reverse Peak Gate Voltage A = 25°C, Pulse Width 1.0 V GRM 5.0 V Operating Junction Temperature Range @ Rate V RRM and V DRM T J −40 to 110 Storage Temperature Range T stg −40 to 150 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. SCRs

0.8 A RMS

Preferred devices are recommended choices for future use and best overall value. TO−92 (TO−226) CASE 029 STYLE 10 PIN ASSIGNMENT Gate Anode Cathode K G A See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

www.kersemi.com *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

www.kersemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance − Junction−to−Case − Junction−to−Ambient R JC R JA 200 °C/W Lead Solder Temperature (1/16″ from case, 10 secs max) T L 260

ELECTRICAL CHARACTERISTICS

C = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 2) T C = 25°C D = Rated V DRM and V RRM ; R GK = 1 k)T C = 110°C I DRM , I RRM 100 A ON CHARACTERISTICS Peak Forward On−State Voltage TM = 1.0 A Peak @ T A = 25°C) V TM 1.7 V Gate Trigger Current (Continuous dc) (Note 3) T C = 25°C AK = 7.0 Vdc, R L = 100 ) I GT 200 A Holding Current (2) T C = 25°C AK = 7.0 Vdc, Initiating Current = 20 mA) T C = −40°C I H 0.5 5.0 mA Latch Current T C = 25°C AK = 7.0 V, Ig = 200 A) T C = −40°C I L 0.6 mA Gate Trigger Voltage (Continuous dc) (Note 3) T C = 25°C AK = 7.0 Vdc, R L = 100 )T C = −40°C V GT 0.62 0.8 1.2 V DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage D = Rated V DRM , Exponential Waveform, R GK = 1000 ,T J = 110°C) dV/dt V/s Critical Rate of Rise of On−State Current PK = 20 A; Pw = 10 sec; diG/dt = 1 A/sec, Igt = 20 mA) di/dt A/s *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 2. R GK = 1000 included in measurement. 3. Does not include R GK in measurement. + Current + Voltage V TM I DRM at V DRM I H Symbol Parameter V DRM Peak Repetitive Off State Forward Voltage I DRM Peak Forward Blocking Current V RRM Peak Repetitive Off State Reverse Voltage I RRM Peak Reverse Blocking Current V TM Peak on State Voltage I H Holding Current Voltage Current Characteristic of SCR Anode + on state Reverse Blocking Region (off state) Reverse Avalanche Region Anode − Forward Blocking Region I RRM at V RRM (off state)

Figure 7. Device Positioning on Tape

  1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
  2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
  3. Component lead to tape adhesion must meet the pull test requirements.
  4. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
  5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
  6. No more than 1 consecutive missing component is permitted.
  7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
  8. Splices will not interfere with the sprocket feed holes.

MCR100−003 MCR100−004

5000 Units / Bulk

MCR100−006 TO−92 (TO−226) MCR100−008 MCR100−3RL

2000 Units / Tape & Reel

MCR100−3RLG TO−92 (TO−226) (Pb−Free)

2000 Units / Tubes

MCR100−6RL TO−92 (TO−226) MCR100−6RLG TO−92 (TO−226) (Pb−Free) MCR100−6RLRA MCR100−6RLRM TO 92 (TO 226)

2000 Units / Ta

p e & Ammunition Box MCR100−6ZL1 TO−92 (TO−226)

2000 Units / Tape & Ammunition Box

MCR100−8RL †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.kersemi.com

STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE TO−92 (TO−226) CASE 029−11 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R A P J L B K G H SECTION X−X CV D N N XX SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 N 0.080 0.105 2.04 2.66 www.kersemi.com