MAC4M KERSEMI | Alldatasheet
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/C0077/C0065/C0067/C0052/C0077/C0044 /C0077/C0065/C0067/C0052/C0078 /C0084/C0114/C0105/C0097/C0099/C0115 Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking V oltage to 800 V olts On-State Current Rating of 4.0 Amperes RMS at 100°C Uniform Gate Trigger Currents in Three Modes High Immunity to dv/dt — 500 V/µs minimum at 125°C Minimizes Snubber Networks for Protection High Surge Current Capability – 40 Amperes Industry Standard TO-220AB Package High Commutating di/dt — 6.0 A/ms minimum at 125°C Operational in Three Quadrants: Q1, Q2, and Q3 Device Marking: Logo, Device Type, e.g., MAC4M, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC4M MAC4N VDRM, VRRM 600 800 Volts On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 100°C) IT(RMS) 4.0 Amps Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125°C) ITSM Amps Circuit Fusing Consideration (t = 8.33 ms) I2t 6.6 A2sec Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 100°C) PGM 0.5 Watt Average Gate Power (t = 8.3 ms, TC = 100°C) PG(AV) 0.1 Watt Operating Junction Temperature Range TJ –40 to +125 Storage Temperature Range Tstg –40 to +150 TRIACS
4 AMPERES RMS
ORDERING INFORMATION
MAC4M TO220AB 50 Units/Rail MAC4N TO220AB TO–220AB CASE 221A STYLE 4 2 3 PIN ASSIGNMENT
3 Gate
4 Main Terminal 2
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50 Units/Rail
G MT2
MAC4M, MAC4N www.kersemi.com THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance — Junction to Case — Junction to Ambient R θJC R θJA 2.2 62.5 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM , VRRM ; Gate Open) T J = 25°C TJ = 125°C IDRM , IRRM 0.01 2.0 mA ON CHARACTERISTICS Peak On-State Voltage(1) (ITM = ± 6.0 A) VTM 1.3 1.6 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω ) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) IGT 8.0 8.0 8.0 mA Holding Current (VD = 12 V, Gate Open, Initiating Current = ±200 mA) IH 6.0 mA Latching Current (VD = 12 V, IG = 35 mA) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) IL mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω ) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) VGT 0.5 0.5 0.5 0.8 0.8 0.8 1.3 1.3 1.3 V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, CL = 5.0 µF, LL = 20 mH, No Snubber) (di/dt)c 6.0 8.4 A/ms Critical Rate of Rise of Off-State Voltage (VD = 0.67 x Rated VDRM , Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 500 1500 V/µs Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz di/dt A/µs (1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
MAC4M, MAC4N + Current + Voltage VTM IH Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current Voltage Current Characteristic of Triacs (Bidirectional Device) IDRM at VDRM on state off state IRRM at VRRM Quadrant 1 MainTerminal 2 + Quadrant 3 MainTerminal 2 –VTM IH VTM Maximum On State Voltage IH Holding Current MT1 (+) IGT GATE (+) MT2 REF MT1 (–) IGT GATE (+) MT2 REF MT1 (+) IGT GATE (–) MT2 REF MT1 (–) IGT GATE (–) MT2 REF MT2 NEGATIVE (Negative Half Cycle) MT2 POSITIVE (Positive Half Cycle) Quadrant III Quadrant IV Quadrant II Quadrant I Quadrant Definitions for a Triac IGT – + IGT All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used. www.kersemi.com
MAC4M, MAC4N PACKAGE DIMENSIONS STYLE 4: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE 4. MAIN TERMINAL 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 Q H Z L V G N A K 12 3 D SEATING PLANE –T– C ST U R J TO–220AB CASE 221A–09 ISSUE Z www.kersemi.com